Product Information

AD230-8-S1

AD230-8-S1 electronic component of First Sensor

Datasheet
Photodiodes AD230-8-S1 120-160V

Manufacturer: First Sensor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

AD230-8-S1
First Sensor

1 : USD 96.9188
5 : USD 82.4732
10 : USD 74.5453
20 : USD 63.5453
50 : USD 61.9386
100 : USD 61.9386
200 : USD 61.9386
500 : USD 61.8722
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Reverse Voltage
Maximum Dark Current
Peak Wavelength
Rise Time
Half Intensity Angle Degrees
Package / Case
Series
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Power Dissipation
Noise Equivalent Power - Nep
Photocurrent
Responsivity
Factory Pack Quantity :
Height
Type
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
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First Sensor APD Data Sheet Part Description AD230-8 TO Order 3001341 500019 500022 Features Description Application RoHS APD with 0.04 mm active area Laser range finder 2011/65/EU Circular active area APD chip with 230 m diameter. Metal can type 230 m diameter active area High speed photometry hermetic TO52S1 package with clear High gain at low bias voltage High speed optical glass window. Fast rise time, low capacitance communications Optimum gain: 50-60 Medical equipment Absolute maximum ratings Spectral response (M = 100) Symbol Parameter Min Max Unit 60 T Storage temp -55 125 C STG 50 T Operating temp -40 100 C OP M Gain (I = 1 nA) 200 max P0 40 I Peak DC current mA 0.25 PEAK 30 Schematic 20 PIN 1 10 PIN 4 0 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 Wavelength (nm) PIN 3 Electro-optical characteristics 23 C Symbol Characteristic Test Condition Min Typ Max Unit diameter 230 m Active area Active area 0.04 mm I 0.2 0.5 nA Dark current M = 100 D C 0.6 pF Capacitance M = 100 Responsivity M = 100 = 800 nm 45 50 A/W t M = 100 = 905 nm R = 50 0.18 ns Rise time R L Cut-off frequency -3dB 2 GHz V 80 120 V Breakdown voltage I = 2 A BR R Change of V with temperature 0.45 V/K Temperature coefficient BR Excess noise factor M = 100 2.2 Excess noise index M = 100 0.2 Rev. 01/02/2018 subject to change without notice www.first-sensor.com contact first-sensor.com Page 1/3 Responsivity (A/W)First Sensor APD Data Sheet First Sensor APD Data Sheet Part Description AD230-8 TO Part Description AD230-8 TO Order 3001341 Order 3001341 Quantum efficiency (23 C) Capacitance as fct of reverse bias (23 C) 100,0 12,00 10,00 80,0 8,00 60,0 6,00 40,0 4,00 20,0 2,00 0,0 0,00 400 450 500 550 600 650 700 750 800 850 900 950 100010501100 0 10 20 30 40 50 60 70 80 90 Reverse bias (V) Wavelength (nm) Multiplication as fct of bias and temperature Dark current as fct of bias and temperature 1.000 1,0E-07 23C 30C 1,0E-08 40C 100 50C 1,0E-09 60C 23C 70C 30C 80C 1,0E-10 40C 10 50C 60C 1,0E-11 70C 80C 1 1,0E-12 20 40 60 80 100 120 140 160 20 40 60 80 100 120 140 160 Reverse bias V Reverse bias V Application hints: Bias supply voltage Current should be limited by a protecting resistor or current limiting - IC inside the power supply For low light level applications blocking of ambient light should be used Current limiting resistor For high gain applications bias voltage should be temperature compensated Please consider basic ESD protection while handling Use low noise read-out - IC For further questions please refer to documentInstructions for handling and processin min. 0,1 F, closest to APD Optimum gain: 50-60 APD Diode, protective circuit Read-out circuit or f.e. 50 Load resistance Rev. 01/02/2018 subject to change without notice www.first-sensor.com contact first-sensor.com Page 2/3 Multiplication Quantum efficiency (%) Dark current (A) Capacitance (pF)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
FIRST SENSOR / SENSORTECHNICS

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