Product Information

AD500-8-S1

AD500-8-S1 electronic component of First Sensor

Datasheet
Photodiodes AD500-8-S1 120-160V

Manufacturer: First Sensor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

AD500-8-S1
First Sensor

1 : USD 76.6559
10 : USD 62.7532
100 : USD 60.5552
500 : USD 58.3338
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Reverse Voltage
Maximum Dark Current
Peak Wavelength
Rise Time
Half Intensity Angle Degrees
Package / Case
Series
Mounting Style
Dark Current
Vr - Reverse Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Power Dissipation
Noise Equivalent Power - Nep
Photocurrent
Responsivity
Factory Pack Quantity :
Height
Type
Width
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Product Type
Subcategory
Taric
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First Sensor APD Data Sheet Part Description AD500-8 TO Order 3001349 500305 500155 500030 Features Description Application RoHS APD with 0.2 mm active area Laser range finder 2011/65/EU Circular active area APD chip with 500 m diameter. Metal can type 500 m diameter active area High speed photometry hermetic TO52 package with clear High gain at low bias voltage High speed optical glass window. Fast rise time, low capacitance communications Optimum gain: 50-60 Medical equipment Absolute maximum ratings Spectral response (M = 100) Symbol Parameter Min Max Unit 60 T Storage temp -55 125 C STG 50 T Operating temp -40 100 C OP M Gain (I = 1 nA) 200 max P0 40 I Peak DC current mA 0.25 PEAK 30 Schematic 20 PIN 1 10 PIN 4 0 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 Wavelength (nm) PIN 3 Electro-optical characteristics 23 C Symbol Characteristic Test Condition Min Typ Max Unit diameter 500 m Active area Active area 0.196 mm I 0.5 1.0 nA Dark current M = 100 D C 2.2 pF Capacitance M = 100 Responsivity M = 100 = 800 nm 45 50 A/W t M = 100 = 905 nm R = 50 0.35 ns Rise time R L Cut-off frequency -3dB 1 GHz V 80 120 V Breakdown voltage I = 2 A BR R Change of V with temperature 0.45 V/K Temperature coefficient BR Excess noise factor M = 100 2.2 Excess noise index M = 100 0.2 Rev. 01/02/2018 subject to change without notice www.first-sensor.com contact first-sensor.com Page 1/3 Responsivity (A/W)First Sensor APD Data Sheet First Sensor APD Data Sheet Part Description AD500-8 TO Part Description AD500-8 TO Order 3001349 Order 3001349 Quantum efficiency (23 C) Capacitance as fct of reverse bias (23 C) 100,0 35,00 30,00 80,0 25,00 60,0 20,00 15,00 40,0 10,00 20,0 5,00 0,0 0,00 400 450 500 550 600 650 700 750 800 850 900 950 100010501100 0 10 20 30 40 50 60 Reverse bias (V) Wavelength (nm) Multiplication as fct of bias (23 C) Dark current as fct of bias (23 C) 1.000 1,0E-08 100 1,0E-09 10 1,0E-10 1 1,0E-11 20 30 40 50 60 70 80 90 100 20 30 40 50 60 70 80 90 100 Reverse bias (V) Reverse bias (V) Application hints: Bias supply voltage Current should be limited by a protecting resistor or current limiting - IC inside the power supply For low light level applications blocking of ambient light should be used Current limiting resistor For high gain applications bias voltage should be temperature compensated Please consider basic ESD protection while handling Use low noise read-out - IC For further questions please refer to documentInstructions for handling and processin min. 0,1 F, closest to APD Optimum gain: 50-60 APD Diode, protective circuit Read-out circuit or f.e. 50 Load resistance Rev. 01/02/2018 subject to change without notice www.first-sensor.com contact first-sensor.com Page 2/3 Multiplication Quantum efficiency (%) Dark current (A) Capacitance (pF)

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
FIRST SENSOR / SENSORTECHNICS

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