X-On Electronics has gained recognition as a prominent supplier of 18N10 MOSFETs across the USA, India, Europe, Australia, and various other global locations. 18N10 MOSFETs are a product manufactured by GOFORD. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

18N10 GOFORD

Name: 18N10
Brand: GOFORD
SKU: 18N10_GOFORD
Availability: InStock
Rating: 5 (11 reviews)

Images are for reference only
See Product Specifications

Part No.	18N10
Manufacturer:	GOFORD
Category:	MOSFETs
Description:	MOSFET N Trench 100V 18A (Tc) 3V @ 250uA 55 mO @ 1A,4.5V TO-252 RoHS
Datasheet:	18N10 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.5801 ea
Line Total: USD 0.58

Availability - 43
Ship by Thu. 14 Nov to Tue. 19 Nov

MOQ: 1 Multiples: 1
Pack Size: 1

18N10 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

43

Ship by Thu. 14 Nov to Tue. 19 Nov

MOQ : 1
Multiples : 1

1 : USD 0.5801
10 : USD 0.519
30 : USD 0.4885
100 : USD 0.4579
500 : USD 0.441
1000 : USD 0.3529

Specifications

Manufacturer
GOFORD GOFORD

Product Category
MOSFETs MOSFETs

Category
MOSFET MOSFET

Rohs
y y

Package
TO - 252 TO - 252

Brand Category
GOFORD GOFORD

Fet Type
n trench n trench

Drain To Source Voltagevdss
100 V 100 V

Continuous Drain Current Id @ 25°C
18 A (t C) 18 A (t C)

Vgsth Max @ Id
3v @ 250ua 3v @ 250ua

Rds On Max @ Id Vgs
55 m @ 1a,4.5v 55 m @ 1a,4.5v

Power Dissipation Max
47 W 47 W

Drain Source Voltage Vdss
100 V 100 V

Continuous Drain Current Id
18 A 18 A

Power Dissipation Pd
47 W 47 W

Drain Source On Resistance Rdson@Vgs Id
55 mOhms @4.5V , 1A 55 mOhms @4.5V , 1A

Gate Threshold Voltage Vgsth@Id
3 V @250uA 3 V @250uA

Type
N Channel N Channel

Notes:- Show Stocked Products With Similar Attributes.

18N10 Alternative Parts

We are delighted to provide the 18N10 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 18N10 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The 18N10 MOSFET N Trench 100V 18A (Tc) 3V @ 250uA 55 mO @ 1A, 4.5V TO-252 RoHS is a high-current small signal N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by GOFORD. It features a 100-volt drain-source voltage (Vds), an 18-ampere drain current (Id), a 3V @ 250uA drain-source on resistance (Rds (on)) and a 4.5V gate-source voltage (Vsg). Its small-signal maximum transconductance (gm) is 55 miliOhm @ 1A. It is packaged in the standard TO-252 three-pin surface mount package which is RoHS compliant. This MOSFET is suitable for both low-voltage/low-power and high-voltage applications in power switches, amplifiers, analog simulators, and power converters.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
43 Ship by Thu. 14 Nov to Tue. 19 Nov MOQ : 1 Multiples : 1	1 : USD 0.5801 10 : USD 0.519 30 : USD 0.4885 100 : USD 0.4579 500 : USD 0.441 1000 : USD 0.3529

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