X-On Electronics has gained recognition as a prominent supplier of GC11N70F MOSFETs across the USA, India, Europe, Australia, and various other global locations. GC11N70F MOSFETs are a product manufactured by GOFORD. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

GC11N70F GOFORD

Name: GC11N70F
Brand: GOFORD
SKU: GC11N70F_GOFORD
Availability: OutOfStock
Rating: 5 (11 reviews)

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See Product Specifications

Part No.	GC11N70F
Manufacturer:	GOFORD
Category:	MOSFETs
Description:	MOSFET N Trench 700V 11A (Tc) 4.5V @ 250uA 395 mÎ© @ 5.5A,10V TO-220F RoHS
Datasheet:	GC11N70F Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.8286 ea
Line Total: USD 0.83

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

GC11N70F More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 Ship by Tue. 20 May to Fri. 23 May MOQ : 1 Multiples : 1	1 : USD 0.8286 10 : USD 0.6752 50 : USD 0.5994 100 : USD 0.5235 500 : USD 0.4772 1000 : USD 0.4551

Specifications

Manufacturer GOFORD GOFORD
Product Category MOSFETs MOSFETs
Category MOSFET MOSFET
Rohs y y
Package TO - 220F TO - 220F
Brand Category GOFORD GOFORD
Fet Type n trench n trench
Drain To Source Voltagevdss 700 V 700 V
Continuous Drain Current Id @ 25°C 11 A (t C) 11 A (t C)
Vgsth Max @ Id 4.5 V @ 250ua 4.5 V @ 250ua
Rds On Max @ Id Vgs 395 m @ 5.5a,10v 395 m @ 5.5a,10v
Power Dissipation-Max Ta 31 W 31 W
Drain Source Voltage Vdss 700 V 700 V
Continuous Drain Current Id 11 A 11 A
Drain Source On Resistance Rdson@Vgs Id 395 mOhms @10V , 5.5A 395 mOhms @10V , 5.5A
Power Dissipation Pd 31 W 31 W
Gate Threshold Voltage Vgsth@Id 4.5 V @250uA 4.5 V @250uA
Type N Channel N Channel

We are delighted to provide the GC11N70F from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GC11N70F and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The GC11N70F is an N-channel, MOSFET field effect transistor manufactured by GOFORD. It has a Trench architecture and is packaged into the TO-220F (RoHS) package. It has a drain-to-source voltage of 700V, a continuous drain current of 11A (Tc) and a gate-to-source voltage of 4.5V @ 250uA. The drain-to-source On-resistance is 395 mO @ 5.5A and 10V. The device can also handle maximum pulsed drain currents of 40A.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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