Product Information

GT52N10T

GT52N10T electronic component of GOFORD

Datasheet
100V 80A 6mO 227W N Channel TO-220 MOSFETs ROHS
Manufacturer: GOFORD
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3003 ea
Line Total: USD 1.3003

4 - Global Stock
Ships to you between
Fri. 06 Oct to Wed. 11 Oct
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4 - Global Stock


Ships to you between
Fri. 06 Oct to Wed. 11 Oct

MOQ : 1
Multiples : 1

Stock Image

GT52N10T
GOFORD

1 : USD 0.7818
10 : USD 0.6981
50 : USD 0.6853
100 : USD 0.5756

Read More Specifications

     
Manufacturer
GOFORD
Product Category
MOSFET
Category
MOSFET
Rohs
y
Package
TO - 220
Brand Category
Goford
Drain Source Voltage Vdss
100 V
Continuous Drain Current Id
80 A
Drain Source On Resistance Rdson@Vgs Id
7.5 mOhms @10V , 50A
Power Dissipation Pd
227 W
Gate Threshold Voltage Vgsth@Id
1.7 V @250uA
Reverse Transfer Capacitance Crss@Vds
38 pF @50V
Type
N Channel
Input Capacitance Ciss@Vds
2626 pF @50V
Total Gate Charge Qg@Vgs
44.5 nC @10V
Operating Temperature
- 55 C ~ + 150 C @ (Tj)
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Additional Infomation About Product

The GT52N10T is a N Channel MOSFET manufactured by GOFORD and is rated at 100V 80A 6mO 227W. It comes in a TO-220 package and is RoHS compliant. The device is capable of switching high-current applications with low-power losses, making it an ideal choice for efficient power conversion applications. It also has a fast switching speed and can be used in high-side and low-side switching applications. In addition, its inbuilt safe-operating area protection ensures safe operation in case of extreme operating conditions.

Australian Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,