Product Information

IS34ML02G081-TLI-TR

IS34ML02G081-TLI-TR electronic component of ISSI

Datasheet
NAND Flash 2G 3.3V x8 1-bit NAND Flash I-Temp
Manufacturer: ISSI
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 10.9321 ea
Line Total: USD 10.93

1274 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
855 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 5.9052
10 : USD 5.4568
25 : USD 5.4443
100 : USD 4.8961
250 : USD 4.8837
500 : USD 4.6595
1000 : USD 4.323
1500 : USD 4.3106
3000 : USD 4.3106

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Series
Memory Size
Interface Type
Organisation
Data Bus Width
Supply Voltage - Min
Supply Voltage - Max
Supply Current - Max
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Maximum Clock Frequency
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Additional Infomation About Product

IS34ML02G081 IS35ML02G081 2Gb SLC-1b ECC 3.3V X8 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35ML02G081 2Gb (x8) 3.3V NAND FLASH MEMORY with 1b ECC FEATURES Flexible & Efficient Memory Efficient Read and Program modes Architecture - Command/Address/Data Multiplexed I/O Interface - Organization: 256Mb x8 - Command Register Operation - Memory Cell Array: (256M + 8M) x 8bit - Automatic Page 0 Read at Power-Up Option - Data Register: (2K + 64) x 8bit - Boot from NAND support - Page Size: (2K + 64) Byte - Automatic Memory Download - Block Erase: (128K + 4K) Byte - NOP: 4 cycles - Memory Cell: 1bit/Memory Cell - Cache Program Operation for High Performance Program - Cache Read Operation Highest performance - Copy-Back Operation - Read Performance - EDO mode - Random Read: 25us (Max.) - OTP operation - Serial Access: 25ns (Max.) - Two-Plane Operation - Write Performance - Bad-Block-Protect - Program time: 400us - typical - Block Erase time: 2ms typical Advanced Security Protection - Hardware Data Protection: Low Power with Wide Temp. Ranges - Program/Erase Lockout during Power Transitions - Single 3.3V (2.7V to 3.6V) Voltage Supply - 15 mA Active Read Current - 10 A Standby Current Industry Standard Pin-out & Packages - Temp Grades: - T =48-pin TSOP (Type I ) - Industrial: -40C to +85C - B =63-ball VFBGA - Extended: -40C to +105C - Automotive, A1: -40C to +85C - Automotive, A2: -40C to +105C Reliable CMOS Floating Gate Technology - ECC Requirement: X8 - 1bit/512Byte - Endurance: 100K Program/Erase cycles - Data Retention: 10 years Integrated Silicon Solution, Inc.- www.issi.com 2 Rev. A3 06/15/2018

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

ISSI may also be referenced as

Integrated Silicon Solution
Integrated Silicon Solution ()
Integrated Silicon Solution (ISSI)
INTEGRATED SILICON SOLUTIONS INC
ISSI
ISSI(Integrated Silicon Solution)
ISSI, Integrated Silicon Solution Inc
Lumissil

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