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S34ML02G104BHI010

S34ML02G104BHI010 electronic component of Infineon

Datasheet
Spansion Flash Memory 2Gb, 3V, 25ns NAND Flash

Manufacturer: Infineon
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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MOQ : 1
Multiples : 1
1 : USD 0.6944
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MOQ : 1
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1 : USD 8.212
100 : USD 5.9724
1000 : USD 5.7456
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0 - Global Stock

MOQ : 5
Multiples : 1
5 : USD 8.8262
10 : USD 7.8561
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S34ML01G1 S34ML02G1 S34ML04G1 1 Gb/2 Gb/4 Gb, 3 V, SLC NAND Flash for Embedded Distinctive Characteristics Density NAND flash interface 1 Gb/ 2 Gb / 4 Gb Open NAND Flash Interface (ONFI) 1.0 compliant Address, Data and Commands multiplexed Architecture Supply voltage Input / Output Bus Width: 8-bits / 16-bits Page size: 3.3-V device: Vcc = 2.7 V ~ 3.6 V x8 = 2112 (2048 + 64) bytes 64 bytes is spare area Security x16 = 1056 (1024 + 32) words 32 words is spare area One Time Programmable (OTP) area Block size: 64 Pages Hardware program/erase disabled during power transition x8 = 128 KB + 4 KB Additional features x16 = 64k + 2k words 2 Gb and 4 Gb parts support Multiplane Program and Erase Plane size: commands 1 Gb / 2 Gb: 1024 Blocks per Plane Supports Copy Back Program x8 = 128 MB + 4 MB 2 Gb and 4 Gb parts support Multiplane Copy Back Program x16 = 64M + 2M words Supports Read Cache 4 Gb: 2048 Blocks per Plane Electronic signature x8 = 256 MB+ 8 MB x16 = 128M + 4M words Manufacturer ID: 01h Device size: Operating temperature 1 Gb: 1 Plane per Device or 128 MB Industrial: -40 C to 85 C 2 Gb: 2 Planes per Device or 256 MB Automotive: -40 C to 105 C 4 Gb: 2 Planes per Device or 512 MB Performance Page Read / Program For one plane structure (1-Gb density) Block zero is valid and will be valid for at least 1,000 Random access: 25 s (Max) program-erase cycles with ECC Sequential access: 25 ns (Min) For two plane structures (2-Gb and 4-Gb densities) Program time / Multiplane Program time: 200 s (Typ) Blocks zero and one are valid and will be valid for at least Block Erase (S34ML01G1) 1,000 program-erase cycles with ECC Block Erase time: 2.0 ms (Typ) Package options Block Erase / Multiplane Erase (S34ML02G1, S34ML04G1) Lead Free and Low Halogen Block Erase time: 3.5 ms (Typ) 48-Pin TSOP 12 20 1.2 mm Reliability 63-Ball BGA 9 11 1 mm 100,000 Program / Erase cycles (Typ) (with 1 bit ECC per 528 bytes (x8) or 264 words (x16)) 10 Year Data retention (Typ) Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-00676 Rev. *V Revised March 20, 2018S34ML01G1 S34ML02G1 S34ML04G1 Contents 1. General Description..................................................... 4 5.8 Thermal Resistance...................................................... 37 5.9 Program / Erase Characteristics................................... 37 1.1 Logic Diagram................................................................ 5 1.2 Connection Diagram ...................................................... 6 6. Timing Diagrams......................................................... 38 1.3 Pin Description............................................................... 7 6.1 Command Latch Cycle.................................................. 38 1.4 Block Diagram................................................................ 8 6.2 Address Latch Cycle..................................................... 38 1.5 Array Organization......................................................... 9 6.3 Data Input Cycle Timing................................................ 39 1.6 Addressing................................................................... 10 6.4 Data Output Cycle Timing 1.7 Mode Selection ............................................................ 12 (CLE=L, WE =H, ALE=L, WP =H)............................... 39 2. Bus Operation ............................................................ 13 6.5 Data Output Cycle Timing (EDO Type, CLE=L, WE =H, ALE=L) .......................... 40 2.1 Command Input ........................................................... 13 6.6 Page Read Operation ................................................... 40 2.2 Address Input............................................................... 13 6.7 Page Read Operation (Interrupted by CE ).................. 41 2.3 Data Input .................................................................... 13 6.8 Page Read Operation Timing with CE Dont Care...... 41 2.4 Data Output.................................................................. 13 6.9 Page Program Operation.............................................. 42 2.5 Write Protect ................................................................ 13 6.10 Page Program Operation Timing 2.6 Standby........................................................................ 13 with CE Dont Care ..................................................... 42 3. Command Set............................................................. 14 6.11 Page Program Operation with Random Data Input ...... 43 3.1 Page Read................................................................... 15 6.12 Random Data Output In a Page ................................... 43 3.2 Page Program.............................................................. 15 6.13 Multiplane Page Program Operation 3.3 Multiplane Program S34ML02G1 and S34ML04G1................................. 44 S34ML02G1 and S34ML04G1................................ 16 6.14 Block Erase Operation.................................................. 45 3.4 Page Reprogram 6.15 Multiplane Block Erase S34ML02G1 and S34ML04G1................................ 16 S34ML02G1 and S34ML04G1................................. 45 3.5 Block Erase.................................................................. 18 6.16 Copy Back Read with Optional Data Readout.............. 46 3.6 Multiplane Block Erase 6.17 Copy Back Program Operation S34ML02G1 and S34ML04G1................................ 18 With Random Data Input............................................... 46 3.7 Copy Back Program..................................................... 18 6.18 Multiplane Copy Back Program 3.8 EDC Operation S34ML02G1 and S34ML04G1....... 19 S34ML02G1 and S34ML04G1................................. 47 3.9 Read Status Register................................................... 21 6.19 Read Status Register Timing........................................ 48 3.10 Read Status Enhanced 6.20 Read Status Enhanced Timing ..................................... 48 S34ML02G1 and S34ML04G1................................ 22 6.21 Reset Operation Timing................................................ 48 3.11 Read Status Register Field Definition.......................... 22 6.22 Read Cache.................................................................. 49 3.12 Reset............................................................................ 22 6.23 Cache Program............................................................. 50 3.13 Read Cache................................................................. 23 6.24 Multiplane Cache Program 3.14 Cache Program............................................................ 24 S34ML02G1 and S34ML04G1................................. 51 3.15 Multiplane Cache Program 6.25 Read ID Operation Timing ............................................ 53 S34ML02G1 and S34ML04G1................................ 25 6.26 Read ID2 Operation Timing .......................................... 53 3.16 Read ID........................................................................ 26 6.27 Read ONFI Signature Timing........................................ 54 3.17 Read ID2...................................................................... 29 6.28 Read Parameter Page Timing ...................................... 54 3.18 Read ONFI Signature .................................................. 29 6.29 OTP Entry Timing ......................................................... 54 3.19 Read Parameter Page ................................................. 29 6.30 Power On and Data Protection Timing ......................... 55 3.20 One-Time Programmable (OTP) Entry ........................ 31 6.31 WP Handling............................................................... 55 4. Signal Descriptions ................................................... 32 7. Physical Interface ....................................................... 56 4.1 Data Protection and Power On / Off Sequence ........... 32 7.1 Physical Diagram.......................................................... 56 4.2 Ready/Busy.................................................................. 32 8. System Interface ......................................................... 58 4.3 Write Protect Operation ............................................... 33 9. Error Management ...................................................... 59 5. Electrical Characteristics.......................................... 34 9.1 System Bad Block Replacement................................... 59 5.1 Valid Blocks ................................................................. 34 9.2 Bad Block Management................................................ 60 5.2 Absolute Maximum Ratings ......................................... 34 5.3 Recommended Operating Conditions.......................... 34 10. Ordering Information.................................................. 61 5.4 AC Test Conditions...................................................... 34 11. Document History Page ............................................. 62 5.5 AC Characteristics ....................................................... 35 5.6 DC Characteristics....................................................... 36 5.7 Pin Capacitance........................................................... 36 Document Number: 002-00676 Rev. *V Page 2 of 71

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
CYP
Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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