2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet The SST12LF01 is a 2.4 GHz Front-End Module (FEM) that combines a high-per- formance Low-Noise Amplifier (LNA) and a Power Amplifier (PA). Designed in compliance with IEEE 802.11 b/g/n applications and based on GaAs PHEMT/HBT technology, the SST12LF01 operates within the frequency range of 2.4- 2.55 GHz at a very low DC-current consumption. The Transmitter chain has excellent linear- ity, typically <3% added EVM up to 19 dBm output power, which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dBm. The SST12LF01 is offered in a 24-contact WQFN package. Features Gain: Built-in, Ultra-low I power-up/down control REF Typically 12 dB gain across 2.42.5 GHz for Receiver I <4 mA REF (RX) chain. Typically 29 dB gain across 2.42.5 GHz over temperature High-speed power-up/down 0C to +80C for Transmitter (TX) chain. Turn on/off time (10%- 90%) <100 ns Typical power-up/down delay with driver delay included Low-Noise Figure <200 ns Typical 1.45 dB across 2.42.55 GHz High temperature stability 50 Input/Output matched along RX chain. ~1 dB gain/power variation between 0C to +85C Rx IIP3 Simple input/output matching >1 dbm across 2.42.55 GHz Single positive power supply High linear output power: Packages available >26.5 dBm P1dB Meets 802.11g OFDM ACPR requirement up to 23 dBm 24-contact WQFN 4mm x 4mm ~3% added EVM up to 19 dBm for 54 Mbps 802.11g signal All devices are RoHS compliant Meets 802.11b ACPR requirement up to 24 dBm High power-added efficiency/Low operating cur- rent for both 802.11g/b applications Applications ~22%/210 mA P = 22 dBm for 802.11g OUT ~26%/240 mA P = 23.5 dBm for 802.11b OUT WLAN Low idle current Bluetooth ~70 mA I CQ Wireless Network Low shut-down current (Typical 2.5 A) 2011 Silicon Storage Technology, Inc. www.microchip.com DS75040A 12/11 PROPRIETARY AND CONFIDENTIAL2.4 GHz Front-End Module SST12LF01 A Microchip Technology Company Data Sheet Product Description The SST12LF01 is a 2.4 GHz Front-End Module (FEM) that combines a high-performance Low-Noise Amplifier (LNA) and a Power Amplifier (PA). Designed in compliance with IEEE 802.11 b/g/n applications and based on GaAs PHEMT/HBT tech- nology, the SST12LF01 operates within the frequency range of 2.42.55 GHz at a very low DC-current consumption. There are two components to the FEM: the Receiver (RX) chain and the Transmitter (TX) chain. The RX chain consist of a cost effective Low-Noise Amplifier (LNA) cell which requires no external RF- matching components. This device is based on the 0.5m GaAs PHEMT technology, and complies with 802.11 b/g/n applications. The LNA provides high-performance, low-noise, and moderate gain operation within the 2.42.55 GHz frequency band. Across this frequency band, the LNA typically provides 12 dB gain and 1.45 dB noise figure. This LNA cell is designed with a self DC-biasing scheme, which maintains low DC current consump- tion, nominally at 11 mA, during operation. Optimum performance is achieved with only a single power supply and no external bias resistors or networks are required. The input and output ports are singled- ended 50 Ohm matched. RF ports are also DC isolated requiring no dc blocking capacitors or match- ing components to reduce system board Bill of Materials (BOM) cost. The TX chain includes a high-efficiency PA based on InGaP/GaAs HBT technology. The PA typically provides 30 dB gain with 22% power-added efficiency at P = 22 dBm for 802.11g and 27% power- OUT added efficiency at P = 24 dBm for 802.11b. OUT The Transmitter chain has excellent linearity, typically <4% added EVM up to 20 dBm output power, which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dBm. The SST12LF01 is offered in 24-contact WQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions. 2011 Silicon Storage Technology, Inc. DS75040A 12/11 2 PROPRIETARY AND CONFIDENTIAL