2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07A A Microchip Technology Company Data Sheet The SST12LP07A is a versatile power amplifier based on the highly-reliable InGaP/ GaAs HBT technology. It is easily configured for high-power applications with excel- lent (30.8%) power-added efficiency, operating over the 2.4- 2.5 GHz frequency band and meeting 802.11 b/g spectrum mask at 23.5 dBm. The SST12LP07A has excellent linearity, typically ~2.5% added EVM at 20 dBm output power, which is essential for 54 Mbps 802.g/n operation. The Power Amplifier has an excellent on-chip, single-ended power detector, providing a reliable solution to board-level power control. The SST12LP07A is offered in a 12-contact XQFN package. Features High Gain: High temperature stability Typically 28 dB gain across 2.4~2.5 GHz over tempera- ~1 dB gain/power variation between 0C to +85C ture 0C to +85C Excellent On-chip power detection High linear output power: 20 dB dynamic range on-chip power detection >28 dBm P1dB - Please refer to Absolute Maximum Stress Ratings on Simple input/output matching page 5 Meets 802.11g OFDM ACPR requirement up to 23.5 dBm Packages available ~2.5% added EVM up to 20 dBm for 54 Mbps 802.11g signal 12-contact XQFN 2mm x 2mm Meets 802.11b ACPR requirement up to 24 dBm All non-Pb (lead-free) devices are RoHS compliant High power-added efficiency/Low operating cur- rent for both 802.11g/b applications ~30.8%/220 mA P = 23.5 dBm for both 802.11g OUT and 802.11b Applications Single-pin low I power-up/down control REF WLAN (IEEE 802.11g/b) I <2 mA REF Home RF Low idle current ~70 mA I CQ Cordless phones High-speed power-up/down 2.4 GHz ISM wireless equipment Turn on/off time (10%- 90%) <100 ns Typical power-up/down delay with driver delay included <200 ns 2012 Silicon Storage Technology, Inc. www.microchip.com DS75035B 05/12 PROPRIETARY AND CONFIDENTIAL2.4 GHz High-Power, High-Gain Power Amplifier SST12LP07A A Microchip Technology Company Data Sheet Product Description The SST12LP07A is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT tech- nology. The SST12LP07A can be easily configured for high-power applications with good power-added effi- ciency while operating over the 2.4- 2.5 GHz frequency band. It typically provides 28 dB gain with 30.8% power-added efficiency P = 23.5 dBm for both 802.11g and 802.11b. OUT The SST12LP07A has excellent linearity, typically ~2.5% added EVM at 20 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23.5 dBm. The SST12LP07A also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin. Ultra-low reference current (total I ~2 mA) makes REF the SST12LP07A controllable by an on/off switching signal directly from the baseband chip. These fea- tures coupled with low operating current make the SST12LP07A ideal for the final stage power amplifi- cation in battery-powered 802.11g/b WLAN transmitter applications. The SST12LP07A has an excellent on-chip, single-ended power detector, which features wide-range (>15 dB) with dB-wise linearization. The excellent on-chip power detector provides a reliable solution to board-level power control. The SST12LP07A is offered in 12-contact XQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions. 2012 Silicon Storage Technology, Inc. DS75035B 05/12 2 PROPRIETARY AND CONFIDENTIAL