TP2502 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode (normally-off) tran- Low threshold (-2.4V max.) sistor utilizes a vertical DMOS structure and Supertexs well- High input impedance proven silicon-gate manufacturing process. This combination Low input capacitance (125pF max.) produces a device with the power handling capabilities of bipolar Fast switching speeds transistors and with the high input impedance and positive Low on-resistance temperature coefcient inherent in MOS devices. Characteristic Free from secondary breakdown of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Low input and output leakage Supertexs vertical DMOS FETs are ideally suited to a wide Applications range of switching and amplifying applications where very Logic level interfaces - ideal for TTL and CMOS low threshold voltage, high breakdown voltage, high input Solid state relays impedance, low input capacitance, and fast switching speeds are desired. Battery operated systems Photo voltaic drives Analog switches General purpose line drivers Telecom switches Ordering Information V I Package Options GS(TH) D(ON) BV /BV R DSS DGS DS(ON) Device (max) (min) (V) () TO-243AA (SOT-89) Die* (V) (A) TP2502 TP2502N8-G TP2502ND -20 2.0 -2.4 -2.0 -G indicates package is RoHS compliant (Green) * MIL visual screening available. Pin Conguration DRAIN SOURCE DRAIN Absolute Maximum Ratings GATE TO-243AA (SOT-89) (N8) Parameter Value Drain-to-source voltage BV DSS Product Marking Drain-to-gate voltage BV DGS W = Code for week sealed T P 5 L W Gate-to-source voltage 20V = Green Packaging Operating and storage temperature -55C to +150C Package may or may not include the following marks: Si or Soldering temperature* 300C TO-243AA (SOT-89) (N8) Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6 mm from case for 10 seconds. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comTP2502 Thermal Characteristics Power Dissipation I I D D I I DRM O jc ja DR Package T = 25 C (continuous) (pulsed) A O O (A) ( C/W) ( C/W) (mA) (mA) (A) (W) TO-243AA -630 -3.3 1.6 15 78 -630 -3.3 I (continuous) is limited by max rated T. D j Mounted on FR5 board, 25mm x 25mm x 1.57mm. Electrical Characteristics (T = 25C unless otherwise specied ) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage -20 - - V V = 0V, I = -2.0mA DSS GS D V Gate threshold voltage -1.0 - -2.4 V V = V , I = -1.0mA GS(th) GS DS D O V Change in V with temperature - 3.0 4.5 mV/ C V = V , I = -1.0mA GS(th) GS(th) GS DS D I Gate body leakage - - -100 nA V = 20V, V = 0V GSS GS DS - -100 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current - V = 0.8 Max Rating, DSS DS - -10 mA V = 0V, T = 125C GS A -0.4 -0.7 - V = -5.0V, V = -15V GS DS I On-state drain current A D(ON) -2.0 -3.3 - V = -10V, V = -15V GS DS 2.0 3.5 V = -5.0V, I = -250mA Static drain-to-source on-state GS D R - DS(ON) resistance 1.5 2.0 V = -10V, I = -1.0A GS D O R Change in R with temperature - 0.75 1.2 %/ C V = -10V, I = -1.0A DS(ON) DS(ON) GS D G Forward transconductance 300 650 - mmho V = -15V, I = -1.0A FS DS D C Input capacitance - - 125 ISS V = 0V, GS C Common source output capacitance - - 70 pF V = -20V, OSS DS f = 1.0 MHz C Reverse transfer capacitance - - 25 RSS t Turn-on delay time - - 10 d(ON) V = -20V, t Rise time - - 11 DD r ns I = -1.0A, D t Turn-off delay time - - 15 d(OFF) R = 25 GEN t Fall time - - 12 f V Diode forward voltage drop - -1.3 -2.0 V V = 0V, I = -1.5A SD GS SD t Reverse recovery time - 300 - ns V = 0V, I = -1.5A rr GS SD Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V PULS E 10% GENERATOR INPUT R -10V 90% GEN t t (ON) (OFF) D.U.T. t t t t d(ON) r d(OFF) F Outpu t 0V INPU T 90% 90% R L OUTPUT 10% 10% V V DD DD 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2