TP2520 P-Channel Enhancement Mode Vertical DMOS FETs Features General Description This low threshold enhancement-mode (normally-off) Low threshold (-2.4V max.) transistor utilizes a vertical DMOS structure and Supertexs High input impedance well-proven silicon-gate manufacturing process. This Low input capacitance (125pF max.) combination produces a device with the power handling Fast switching speeds capabilities of bipolar transistors and with the high input Low on-resistance impedance and positive temperature coefcient inherent Free from secondary breakdown in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally- Low input and output leakage induced secondary breakdown. Applications Supertexs vertical DMOS FETs are ideally suited to a wide Logic level interfaces ideal for TTL and CMOS range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input Solid state relays impedance, low input capacitance, and fast switching Battery operated systems speeds are desired. Photo voltaic drives Analog switches General purpose line drivers Telecom switches Ordering Information R V I Package Option DS(ON) GS(th) D(ON) BV /BV DSS DGS Device (max) (max) (min) (V) TO-243AA (SOT-89) () (V) (A) TP2520 TP2520N8-G -200 12 -2.4 -0.75 -G indicates package is RoHS compliant (Green) Pin Conguration DRAIN Absolute Maximum Ratings SOURCE DRAIN Parameter Value GATE Drain-to-source voltage BV TO-243AA (SOT-89) (N8) DSS Drain-to-gate voltage BV DGS Product Marking Gate-to-source voltage 20V W = Code for week sealed Operating and storage temperature -55C to +150C T P 5 C W = Green Packaging Soldering temperature* 300C Package may or may not include the following marks: Si or Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not TO-243AA (SOT-89) (N8) implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. * Distance of 1.6 mm from case for 10 seconds. 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.comTP2520 Thermal Characteristics Power Dissipation I I D D I I jc ja DR DRM O Package T = 25 C (continuous) (pulsed) A O O ( C/W) ( C/W) (mA) (A) (mA) (A) (W) TO-243AA (SOT-89) -260 -2.0 1.6 15 78 -260 -2.0 I (continuous) is limited by max rated T . D j Mounted on FR5 board, 25mm x 25mm x 1.57mm. Electrical Characteristics (T = 25C unless otherwise specied) A Sym Parameter Min Typ Max Units Conditions BV Drain-to-source breakdown voltage -200 - - V V = 0V, I = -2.0mA DSS GS D V Gate threshold voltage -1.0 - -2.4 V V = V , I = -1.0mA GS(th) GS DS D O V Change in V with temperature - - 4.5 mV/ C V = V , I = -1.0mA GS(th) GS(th) GS DS D I Gate body leakage - - -100 nA V = 20V, V = 0V GSS GS DS - -10 A V = 0V, V = Max Rating GS DS I Zero gate voltage drain current - DSS V = 0.8 Max Rating, DS - -1.0 mA V = 0V, T = 125C GS A -0.25 -0.7 - V = -4.5V, V = -25V GS DS I On-state drain current A D(ON) -0.75 -2.1 - V = -10V, V = -25V GS DS 10 15 V = -4.5V, I = -100mA Static drain-to-source on-state GS D R - DS(ON) resistance 8.0 12 V = -10V, I = -200mA GS D O R Change in R with temperature - - 1.7 %/ C V = -10V, I = -200mA DS(ON) DS(ON) GS D G Forward transconductance 100 250 - mmho V = -25V, I = -200mA FS DS D C Input capacitance - 75 125 ISS V = 0V, GS C Common source output capacitance - 20 85 pF V = -25V, OSS DS f = 1.0 MHz C Reverse transfer capacitance - 10 35 RSS t Turn-on delay time - - 10 d(ON) V = -25V, DD t Rise time - - 15 r ns I = -750mA, D t Turn-off delay time - - 20 d(OFF) R = 25 GEN t Fall time - - 15 f V Diode forward voltage drop - - -1.8 V V = 0V, I = -500mA SD GS SD t Reverse recovery time - 300 - ns V = 0V, I = -500mA rr GS SD Notes: O 1. All D.C. parameters 100% tested at 25 C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V PULS E 10% GENERATOR INPUT -10V R 90% GEN t t (ON) (OFF) D.U.T. t t t t d(ON) r d(OFF) F Outpu t 0V INPU T 90% 90% R L OUTPUT 10% 10% V V DD DD 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com 2