MT16HTF25664HZ-800M1

1GB, 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM Features DDR2 SDRAM SODIMM MT16HTF12864HZ 1GB MT16HTF25664HZ 2GB MT16HTF51264HZ 4GB Figure 1: 200-Pin SODIMM (MO-224 R/C E) Features Module Height: 30mm (1.181 in.) 200-pin, small-outline dual in-line memory module (SODIMM) Fast data transfer rates: PC2-3200, PC2-4200, PC2-5300, or PC2-6400 1GB (128 Meg x 64), 2GB (256 Meg x 64) or 4GB (512 Meg x 64) V = V = 1.8V DD DDQ V = 1.73.6V DDSPD JEDEC-standard 1.8V I/O (SSTL 18-compatible) Differential data strobe (DQS, DQS ) option Options Marking 4n-bit prefetch architecture Operating temperature Multiple internal device banks for concurrent Commercial (0C T +70C) None A operation 1 I Industrial (40C T +85C) A Programmable CAS latency (CL) Package Posted CAS additive latency (AL) 200-pin DIMM (halogen-free) Z t WRITE latency = READ latency - 1 CK 2 Frequency/CL Programmable burst lengths (BL): 4 or 8 1.87ns CL = 7 (DDR2-1066) -1GA 2.5ns CL = 5 (DDR2-800) -80E Adjustable data-output drive strength 2.5ns CL = 6 (DDR2-800) -800 64ms, 8192-cycle refresh 3ns CL = 5 (DDR2-667) -667 On-die termination (ODT) Notes: 1. Contact Micron for industrial temperature Halogen-free module offerings. Serial presence detect (SPD) with EEPROM 2. CL = CAS (READ) latency. Gold edge contacts 3. Not recommended for new designs. Dual rank Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 7 CL = 6 CL = 5 CL = 4 CL = 3 (ns) (ns) (ns) -1GA PC2-8500 1066 800 667 533 400 13.125 13.125 58.125 -80E PC2-6400 800 800 533 400 12.5 12.5 57.5 -800 PC2-6400 800 667 533 400 15 15 60 -667 PC2-5300 667 553 400 15 15 60 -53E PC2-4200 553 400 15 15 55 -40E PC2-3200 400 400 15 15 55 PDF: 09005aef8339ef97 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 htf16c128 256 512x64hz.pdf - Rev. C 9/10 EN 2008 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.1GB, 2GB, 4GB (x64, DR) 200-Pin DDR2 SDRAM SODIMM Features Table 2: Addressing Parameter 1GB 2GB 4GB Refresh count 8K 8K 8K Row address 16K A 13:0 16K A 13:0 32K A 14:0 Device bank address 4 BA 1:0 8 BA 2:0 8 BA 2:0 Device configuration 512Mb (64 Meg x 8) 1Gb (128 Meg x 8) 2Gb (256 Meg x 8) Column address 1K A 9:0 1K A 9:0 1K A 9:0 Module rank address 2 S 1:0 2 S 1:0 2 S 1:0 Table 3: Part Numbers and Timing Parameters 1GB Modules 1 Base device: MT47H64M8, 512Mb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT16HTF12864H(I)Z-1GA 1GB 128 Meg x 64 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 MT16HTF12864H(I)Z-80E 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT16HTF12864H(I)Z-800 1GB 128 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT16HTF12864H(I)Z-667 1GB 128 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 4: Part Numbers and Timing Parameters 2GB Modules 1 Base device: MT47H128M8, 1Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT16HTF25664H(I)Z-1GA 2GB 256 Meg x 64 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 MT16HTF25664H(I)Z-80E 2GB 256 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT16HTF25664H(I)Z-800 2GB 256 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT16HTF25664H(I)Z-667 2GB 256 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 Table 5: Part Numbers and Timing Parameters 2GB Modules 1 Base device: MT47H256M8, 2Gb DDR2 SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT16HTF51264H(I)Z-1GA 4GB 512 Meg x 64 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 MT16HTF51264H(I)Z-80E 4GB 512 Meg x 64 6.4 GB/s 2.5ns/800 MT/s 5-5-5 MT16HTF51264H(I)Z-800 4GB 512Meg x 64 6.4 GB/s 2.5ns/800 MT/s 6-6-6 MT16HTF51264H(I)Z-667 4GB 512 Meg x 64 5.3 GB/s 3.0ns/667 MT/s 5-5-5 1. The data sheet for the base device can be found on Microns Web site. Notes: 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT16HTF25664HZ-80EH1. PDF: 09005aef8339ef97 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 htf16c128 256 512x64hz.pdf - Rev. C 9/10 EN 2008 Micron Technology, Inc. All rights reserved.