Product Information

MT16KTF51264HZ-1G6K1

MT16KTF51264HZ-1G6K1 electronic component of Micron

Datasheet
DRAM Module DDR3L SDRAM 4Gbyte 204SODIMM

Manufacturer: Micron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 122.0964 ea
Line Total: USD 122.1

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1
1 : USD 122.0964

0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1
1 : USD 137.4351

     
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2GB, 4GB, 8GB (x64, DR) 204-Pin 1.35V DDR3L SODIMM Features 1.35V DDR3L SDRAM SODIMM MT16KTF25664HZ 2GB MT16KTF51264HZ 4GB MT16KTF1G64HZ 8GB Figure 1: 204-Pin SODIMM (MO-268 R/C F) Features DDR3L functionality and operations supported as Module height: 30mm (1.181in) defined in the component data sheet 204-pin, small outline dual in-line memory module (SODIMM) Fast data transfer rates: PC3-14900, PC3-12800, PC3-10600, PC3-8500, or PC3-6400 2GB (256 Meg x 64), 4GB (512 Meg x 64), 8GB (1 Gig x 64) V = 1.35V (1.283V1.45V) DD V = 1.5V (1.4251.575V) DD Backward compatible to V = 1.5V 0.075V DD Options Marking V = 3.03.6V DDSPD Operating temperature Nominal and dynamic on-die termination (ODT) for Commercial (0C T +70C) None A data, strobe, and mask signals Package Dual rank 240-pin DIMM (halogen-free) Z Fixed burst chop (BC) of 4 and burst length (BL) of 8 Frequency/CAS latency via the mode register set (MRS) 1.07ns CL = 13 (DDR3-1866) -1G9 2 1.25ns CL = 11 (DDR3-1600) -1G6 On-board I C serial presence-detect (SPD) EEPROM 1.5ns CL = 9 (DDR3-1333) -1G4 Selectable BC4 or BL8 on-the-fly (OTF) 1.87ns CL = 7 (DDR3-1066) -1G1 Gold edge contacts Halogen-free Fly-by topology Terminated control, command, and address bus Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry CL = CL = CL = RCD RP RC Grade Nomenclature 13 11 10 CL = 9 CL = 8 CL = 7 CL = 6 CL = 5 (ns) (ns) (ns) -1G9 PC3-14900 1866 1600 1333 1333 1066 1066 800 667 13.125 13.125 47.125 -1G6 PC3-12800 1600 1333 1333 1066 1066 800 667 13.125 13.125 48.125 -1G4 PC3-10600 1333 1333 1066 1066 800 667 13.125 13.125 49.125 -1G1 PC3-8500 1066 1066 800 667 13.125 13.125 50.625 -1G0 PC3-8500 1066 800 667 15 15 52.5 -80B PC3-6400 800 667 15 15 52.5 PDF: 09005aef846206a0 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 ktf16c256 512 1gx64hz.pdf - Rev. H 5/13 EN 2011 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.2GB, 4GB, 8GB (x64, DR) 204-Pin 1.35V DDR3L SODIMM Features Table 2: Addressing Parameter 2GB 4GB 8GB Refresh count 8K 8K 8K Row address 16K A 13:0 32K A 14:0 64K A 15:0 Device bank address 8 BA 2:0 8 BA 2:0 8 BA 2:0 Device configuration 1Gb (128 Meg x 8) 2Gb (256 Meg x 8) 4Gb (512 Meg x8) Column address 1K A 9:0 1K A 9:0 1K A 9:0 Module rank address 2 S 1:0 2 S 1:0 2 S 1:0 Table 3: Part Numbers and Timing Parameters 2GB Modules 1 Base device: MT41K128M8, 1Gb 1.35V DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT16KTF25664HZ-1G6 2GB 256 Meg x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT16KTF25664HZ-1G4 2GB 256 Meg x 64 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT16KTF25664HZ-1G1 2GB 256 Meg x 64 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Table 4: Part Numbers and Timing Parameters 4GB Modules 1 Base device: MT41K256M8, 2Gb 1.35V DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT16KTF51264HZ-1G6 4GB 512 Meg x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT16KTF51264HZ-1G6 4GB 512 Meg x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT16KTF51264HZ-1G4 4GB 512 Meg x 64 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT16KTF51264HZ-1G1 4GB 512 Meg x 64 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Table 5: Part Numbers and Timing Parameters 8GB Modules 1 Base device: MT41K512M8, 4Gb 1.35V DDR3L SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT16KTF1G64HZ-1G9 8GB 1 Gig x 64 14.9 GB/s 1.07ns/1866 MT/s 13-13-13 MT16KTF1G64HZ-1G6 8GB 1 Gig x 64 12.8 GB/s 1.25ns/1600 MT/s 11-11-11 MT16KTF1G64HZ-1G4 8GB 1 Gig x 64 10.6 GB/s 1.5ns/1333 MT/s 9-9-9 MT16KTF1G64HZ-1G1 8GB 1 Gig x 64 8.5 GB/s 1.87ns/1066 MT/s 7-7-7 Notes: 1. The data sheet for the base device can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Con- sult factory for current revision codes. Example: MT16KTF51264HZ-1G4M1. PDF: 09005aef846206a0 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 ktf16c256 512 1gx64hz.pdf - Rev. H 5/13 EN 2011 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 31 No ..Random Access Memory (RAM) including Single Inline Memory Modules (SIMMS), Dual Inline Memory Modules (DIMMS), Dynamic Random Access Memory (DRAM), Synchronous Dynamic Random Access Memory (SD RAM), Rambus Dynamic Random Access Memory (RD RAM) and other similar memory

8542.32.00 33 No ..Memory cards (other than ""smart"" cards and SIMM), which incorporate E2PROM, SRAM, DRAM or flash memory (for example, for PCMCIA applications)
EL9
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)

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