512MB, 1GB, 2GB (x64, DR) 184-Pin DDR SDRAM UDIMM Features DDR SDRAM UDIMM MT16VDDT6464A 512MB MT16VDDT12864A 1GB MT16VDDT25664A 2GB For component data sheets, refer to Microns Web site: www.micron.com Figure 1: 184-Pin UDIMM (MO-206 R/C B) Features 184-pin, unbuffered dual in-line memory module PCB height: 31.75mm (1.25in) (UDIMM) Fast data transfer rates: PC-2100, PC-2700, or PC-3200 512MB (64 Meg x 64), 1GB (128 Meg x 64), or 2GB (256 Meg x 64) VDD = VDDQ = +2.5V (-40B: VDD = VDDQ = +2.6V) VDDSPD = +2.3V to +3.6V Options Marking 1 2.5V I/O (SSTL 2-compatible) Operating temperature Internal, pipelined double data rate (DDR) Commercial (0C T +70C) None A 2n-prefetch architecture Industrial (40C T +85C) I A Bidirectional data strobe (DQS) transmitted/ Package received with datathat is, source-synchronous 200-pin DIMM (standard) G data capture 200-pin DIMM (Pb-free) Y Differential clock inputs (CK and CK ) Memory clock, speed, CAS latency Multiple internal device banks for concurrent 5.0ns (200 MHz), 400 MT/s, CL = 3 -40B operation 6.0ns (167 MHz), 333 MT/s, CL = 2.5 -335 2 Dual rank 7.5ns (133 MHz), 266 MT/s, CL = 2 -262 2 Selectable burst lengths (BL): 2, 4, or 8 7.5ns (133 MHz), 266 MT/s, CL = 2 -26A 2 Auto precharge option 7.5ns (133 MHz), 266 MT/s, CL = 2.5 -265 Auto refresh and self refresh modes: 7.8125s 1. Contact Micron for industrial temperature maximum average periodic refresh interval module offerings. Serial presence-detect (SPD) with EEPROM 2. Not recommended for new designs. Selectable CAS latency (CL) for maximum compatibility Gold edge contacts Table 1: Key Timing Parameters Data Rate (MT/s) t t t Speed Industry RCD RP RC Grade Nomenclature CL = 3 CL = 2.5 CL = 2 (ns) (ns) (ns) Notes -40B PC3200 400 333 266 15 15 55 -335 PC2700 333 266 18 18 60 1 -262 PC2100 266 266 15 15 60 -26A PC2100 266 266 20 20 65 -265 PC2100 266 200 20 20 65 t t Notes: 1. The values of RCD and RP for -335 modules show 18ns to align with industry specifications actual DDR SDRAM device specifications are 15ns. PDF: 09005aef80739fa5/Source:09005aef807397e5 Micron Technology, Inc., reserves the right to change products or specifications without notice. DD16C64 128 256x64A.fm - Rev. E 8/08 EN 1 2004 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. 512MB, 1GB, 2GB (x64, DR) 184-Pin DDR SDRAM UDIMM Features Table 2: Addressing Parameter 512MB 1GB 2GB Refresh count 8K 8K 8K Row address 8K (A0A12) 8K (A0A12) 16K (A0A13) Device bank address 4 (BA0, BA1) 4 (BA0, BA1) 4 (BA0, BA1) Device configuration 256Mb (32 Meg x 8) 512Mb (64 Meg x 8) 1Gb (128 Meg x 8) Column address 1K (A0A9) 2K (A0A9, A11) 2K (A0A9, A11) Module rank address 2 (S0 , S1 ) 2 (S0 , S1 ) 2 (S0 , S1 ) Table 3: Part Numbers and Timing Parameters 512MB Modules 1 Base device: MT46V32M8, 256Mb DDR SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT16VDDT6464AG-40B 512MB 64 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3 MT16VDDT6464AY-40B 512MB 64 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3 MT16VDDT6464AG-335 512MB 64 Meg x 64 2.7 GB/s 6.0ns/333 MT/s 2.5-3-3 MT16VDDT6464AY-335 512MB 64 Meg x 64 2.7 GB/s 6.0ns/333 MT/s 2.5-3-3 MT16VDDT6464AG-262 512MB 64 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2-2-2 MT16VDDT6464AG-26A 512MB 64 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2-3-3 MT16VDDT6464AG-265 512MB 64 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3 MT16VDDT6464AY-265 512MB 64 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3 Table 4: Part Numbers and Timing Parameters 1GB Modules 1 Base device: MT46V64M8, 512Mb DDR SDRAM Module Module Memory Clock/ Clock Cycles 2 t t Part Number Density Configuration Bandwidth Data Rate (CL- RCD- RP) MT16VDDT12864AG-40B 1GB 128 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3 MT16VDDT12864AY-40B 1GB 128 Meg x 64 3.2 GB/s 5.0ns/400 MT/s 3-3-3 MT16VDDT12864AG-335 1GB 128 Meg x 64 2.7 GB/s 6.0ns/333 MT/s 2.5-3-3 MT16VDDT12864AY-335 1GB 128 Meg x 64 2.7 GB/s 6.0ns/333 MT/s 2.5-3-3 MT16VDDT12864AG-262 1GB 128 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2-2-2 MT16VDDT12864AG-265 1GB 128 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3 MT16VDDT12864AY-265 1GB 128 Meg x 64 2.1 GB/s 7.5ns/266 MT/s 2.5-3-3 Notes: 1. The data sheets for the base devices can be found on Microns Web site. 2. All part numbers end with a two-place code (not shown) that designates component and PCB revisions. Consult factory for current revision codes. Example: MT16VDDT6464AY-40BG4. PDF: 09005aef80739fa5/Source:09005aef807397e5 Micron Technology, Inc., reserves the right to change products or specifications without notice. DD16C64 128 256x64A.fm - Rev. E 8/08 EN 2 2004 Micron Technology, Inc. All rights reserved