X-On Electronics has gained recognition as a prominent supplier of MT40A256M16GE-083E AAT:B DRAM across the USA, India, Europe, Australia, and various other global locations. MT40A256M16GE-083E AAT:B DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT40A256M16GE-083E AAT:B Micron

MT40A256M16GE-083E AAT:B electronic component of Micron
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Part No.MT40A256M16GE-083E AAT:B
Manufacturer: Micron
Category: DRAM
Description: DDR4 4G 256MX16 FBGA
Datasheet: MT40A256M16GE-083E AAT:B Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Obsolete
Availability Price Quantity
0
MOQ : 1020
Multiples : 1020
1020 : USD 10.9389
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MOQ : 1
Multiples : 1
1 : USD 16.1573
10 : USD 14.8434
25 : USD 14.634
50 : USD 14.4507
100 : USD 13.5345
250 : USD 12.9455
500 : USD 12.8669
1000 : USD 12.5004
2000 : USD 12.4088
N/A

Obsolete
   
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We are delighted to provide the MT40A256M16GE-083E AAT:B from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT40A256M16GE-083E AAT:B and other electronic components in the DRAM category and beyond.

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4Gb: x8, x16 Automotive DDR4 SDRAM Features Automotive DDR4 SDRAM MT40A512M8, MT40A256M16 1 Options Marking Features Configuration V = V = 1.2V 60mV DD DDQ 512 Meg x 8 512M8 V = 2.5V 125mV/+250mV PP 256 Meg x 16 256M16 On-die, internal, adjustable V generation REFDQ BGA package (Pb-free) x8 1.2V pseudo open-drain I/O 78-ball (9mm x 10.5mm) Rev. B RH Refresh maximum interval time at T temperature C 78-ball (7.5mm x 11mm) Rev. F SA, AG range: FBGA package (Pb-free) x16 64ms at 40C to 85C 96-ball (9mm x 14mm) Rev. B GE 32ms at 85C to 95C 96-ball (7.5mm x 13.5mm) Rev. F LY, AD 16ms at 96C to 105C Timing cycle time 8ms at 106C to 125C 0.625ns CL = 22 (DDR4-3200) -062E 16 internal banks ( x8): 4 groups of 4 banks each 0.750ns CL = 18 (DDR4-2666) -075E 8 internal banks (x16): 2 groups of 4 banks each 0.833ns CL = 16 (DDR4-2400) -083E 8n-bit prefetch architecture Automotive grade A Programmable data strobe preambles AEC-Q100 Data strobe preamble training PPAP Command/Address latency (CAL) Operating temperature Multipurpose register read and write capability Industrial (40C T +95C) IT C Write leveling Automotive (40C T +105C) AT C Self refresh mode 3 Ultra-high (40C T +125C) UT C Low-power auto self refresh (LPASR) Revision :B :F Temperature controlled refresh (TCR) 1. Not all options listed can be combined to Notes: Fine granularity refresh define an offered product. Use the part cat- Self refresh abort alog search on 4Gb: x8, x16 Automotive DDR4 SDRAM Features Table 2: Addressing Parameter 512 Meg x 8 256 Meg x 16 Number of bank groups 4 2 Bank group address BG 1:0 BG0 Bank count per group 4 4 Bank address in bank group BA 1:0 BA 1:0 Row addressing 32K (A 14:0 ) 32K (A 14:0 ) Column addressing 1K (A 9:0 ) 1K (A 9:0 ) 1 Page size 1KB 2KB Note: 1. Page size is per bank, calculated as follows: COLBITS Page size = 2 ORG/8, where COLBIT = the number of column address bits and ORG = the number of DQ bits. Figure 1: Order Part Number Example Example Part Number: MT40A512M8RH-075E AAT:B - : Configuration Package Speed Revision MT40A Revision Configuration Mark 512 Meg x 8 512M8 :B, :F 256 Meg x 16 256M16 Package Mark Case Temperature Mark 78-ball 9.0mm x 10.5mm FBGA RH Commercial None 78-ball 7.5mm x 11.0mm FBGA SA, AG Industrial IT 96-ball 9.0mm x 14.0mm FBGA GE Automotive AT 96-ball 7.5mm x 13.5mm FBGA LY, AD Ultra-high UT Speed Grade Mark t CK = 0.625ns, CL = 22 -062E Product certification Mark t Automotive CK = 0.750ns, CL = 18 -075E A t CK = 0.833ns, CL = 16 -083E CCMTD-1725822587-10418 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 4gb auto ddr4 sdram z90b z10B.pdf - Rev. L 03/2021 EN 2016 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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