X-On Electronics has gained recognition as a prominent supplier of MT41K128M16JT-125 XIT:K DRAM across the USA, India, Europe, Australia, and various other global locations. MT41K128M16JT-125 XIT:K DRAM are a product manufactured by Micron. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

MT41K128M16JT-125 XIT:K Micron

MT41K128M16JT-125 XIT:K electronic component of Micron
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Part No.MT41K128M16JT-125 XIT:K
Manufacturer: Micron
Category: DRAM
Description: DRAM Chip DDR3L SDRAM 2Gbit 128Mx16 1.35V 96-Pin FBGA
Datasheet: MT41K128M16JT-125 XIT:K Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 10.051 ea
Line Total: USD 10.05 
Availability - 351
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Thu. 14 Nov to Tue. 19 Nov
MOQ : 1
Multiples : 1
1 : USD 16.3052
10 : USD 14.9484
30 : USD 13.8072
100 : USD 12.8112

351
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 10.051
10 : USD 9.361
25 : USD 8.3835
100 : USD 8.027
250 : USD 7.82
500 : USD 7.82
1000 : USD 7.82
2448 : USD 7.82

120
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 20
Multiples : 1
20 : USD 11.2876
80 : USD 10.1963

4669
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 8.1185

221
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 12.2382
10 : USD 11.3282
25 : USD 9.9762
100 : USD 9.5524
250 : USD 9.1234
500 : USD 9.0324
1000 : USD 8.424

   
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We are delighted to provide the MT41K128M16JT-125 XIT:K from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the MT41K128M16JT-125 XIT:K and other electronic components in the DRAM category and beyond.

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2Gb: x4, x8, x16 DDR3L SDRAM Description 1.35V DDR3L SDRAM MT41K512M4 64 Meg x 4 x 8 banks MT41K256M8 32 Meg x 8 x 8 banks MT41K128M16 16 Meg x 16 x 8 banks Automatic self refresh (ASR) Description Write leveling The 1.35V DDR3L SDRAM device is a low-voltage ver- Multipurpose register sion of the 1.5V DDR3 SDRAM device. Unless stated Output driver calibration otherwise, the DDR3L SDRAM device meets the func- Options Marking tional and timing specifications listed in the equiva- Configuration lent density standard or automotive DDR3 SDRAM 512 Meg x 4 512M4 data sheet located on www.micron.com. 256 Meg x 8 256M8 Features 128 Meg x 16 128M16 V = V = 1.35V (1.2831.45V) DD DDQ FBGA package (Pb-free) x4, x8 Backward-compatible to V = V = 1.5V 0.075V DD DDQ 78-ball (8mm x 10.5mm) DA Differential bidirectional data strobe Rev. H, M, K 8n-bit prefetch architecture 78-ball FBGA (9mm x 11.5mm) HX Differential clock inputs (CK, CK ) Rev. D 8 internal banks FBGA package (Pb-free) x16 Nominal and dynamic on-die termination (ODT) 96-ball FBGA (9mm x 14mm) HA for data, strobe, and mask signals Rev. D Programmable CAS (READ) latency (CL) 96-ball FBGA (8mm x 14mm) JT Programmable posted CAS additive latency (AL) Rev. K Programmable CAS (WRITE) latency (CWL) Timing cycle time Fixed burst length (BL) of 8 and burst chop (BC) of 4 1.071ns CL = 13 (DDR3-1866) -107 (via the mode register set MRS ) 1.25ns CL = 11 (DDR3-1600) -125 Selectable BC4 or BL8 on-the-fly (OTF) 1.5ns CL = 9 (DDR3-1333) -15E Self refresh mode 1.875ns CL = 7 (DDR3-1066) -187E T of 0C to +95C C Operating temperature 64ms, 8192-cycle refresh at 0C to +85C Commercial (0C T +95C) None C 32ms at +85C to +95C Industrial (40C T +95C) IT C Self refresh temperature (SRT) Revision :D/ :H/ :K/ :M Table 1: Key Timing Parameters t t t t Speed Grade Data Rate (MT/s) Target RCD- RP-CL RCD (ns) RP (ns) CL (ns) 1, 2, 3 -107 1866 13-13-13 13.91 13.91 13.91 1, 2 -125 1600 11-11-11 13.75 13.75 13.75 1 -15E 1333 9-9-9 13.5 13.5 13.5 -187E 1066 7-7-7 13.1 13.1 13.1 1. Backward compatible to 1066, CL = 7 (-187E). Notes: 2. Backward compatible to 1333, CL = 9 (-15E). 3. Backward compatible to 1600, CL = 11 (-107). PDF: 09005aef83ed2952 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 2Gb 1 35V DDR3L.pdf - Rev. I 10/12 EN 2010 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.2Gb: x4, x8, x16 DDR3L SDRAM Description Table 2: Addressing Parameter 512 Meg x 4 256 Meg x 8 128 Meg x 16 Configuration 64 Meg x 4 x 8 banks 32 Meg x 8 x 8 banks 16 Meg x 16 x 8 banks Refresh count 8K 8K 8K Row address 32K A 14:0 32K A 14:0 16K A 13:0 Bank address 8 BA 2:0 8 BA 2:0 8 BA 2:0 Column address 2K A 11, 9:0 1K A 9:0 1K A 9:0 PDF: 09005aef83ed2952 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 2Gb 1 35V DDR3L.pdf - Rev. I 10/12 EN 2010 Micron Technology, Inc. All rights reserved.

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
Elpida Memory
ELPIDA MEMORY INC
IE6
MI9
MICRON SEMICONDUCTOR
Micron Tech
MICRON TECHNOLOGY
Micron Technology Inc
Micron Technology Inc.
NU9
Numonyx - A DIVISION OF MICRON SEMICONDUCTOR PRODUCTS, INC. (VA)
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