MT41K1G8RKB-107:P TR

8Gb: x4, x8 TwinDie DDR3L SDRAM Description TwinDie 1.35V DDR3L SDRAM MT41K2G4 128 Meg x 4 x 8 Banks x 2 Ranks MT41K1G8 64 Meg x 8 x 8 Banks x 2 Ranks Options Marking Description Configuration The 8Gb (TwinDie) DDR3L SDRAM (1.35V) uses 128 Meg x 4 x 8 banks x 2 ranks 2G4 Microns 4Gb DDR3L SDRAM die (essentially two 64 Meg x 8 x 8 banks x 2 ranks 1G8 ranks of the 4Gb DDR3L SDRAM). Refer to Microns 78-ball FBGA package (Pb-free) 4Gb DDR3 SDRAM data sheet for the specifications (9.5mm x 11.5mm x 1.2mm) Die TRF not included in this document. Specifications for base Rev :E part number MT41K1G4 correlate to TwinDie manu- (8mm x 10.5mm x 1.2mm) Die RKB facturing part number MT41K2G4 specifications for Rev :N, P base part number MT41K512M8 correlate to TwinDie 1 Timing cycle time manufacturing part number MT41K1G8. 1.071ns CL = 13 (DDR3L-1866) -107 1.25ns CL = 11 (DDR3L-1600) -125 Features 1.5ns CL = 9 (DDR3L-1333) -15E Uses 4Gb Micron die Self refresh Two ranks (includes dual CS , ODT, CKE, and ZQ Standard None balls) Operating temperature Each rank has eight internal banks for concurrent Commercial (0C T 95C) None C operation Industrial (-40C T 95C) IT C V = V = 1.35V (1.2831.45V) backward com- DD DDQ Revision :E/:N/:P patible to V = V = 1.5V 0.075V DD DDQ 1.35V center-terminated push/pull I/O 1. CL = CAS (READ) latency. Note: JEDEC-standard ball-out Low-profile package T of 0C to 95C C 0C to 85C: 8192 refresh cycles in 64ms 85C to 95C: 8192 refresh cycles in 32ms Industrial temperature (IT) available (Rev. E) Table 1: Key Timing Parameters t t t t Speed Grade Data Rate (MT/s) Target RCD- RP-CL RCD (ns) RP (ns) CL (ns) 1 2 , -107 1866 13-13-13 13.91 13.91 13.91 1 -125 1600 11-11-11 13.75 13.75 13.75 -15E 1333 9-9-9 13.5 13.5 13.5 1. Backward compatible to 1333, CL = 9 (-15E). Notes: 2. Backward compatible to 1600, CL = 11 (-125). CCMTD-1725822587-9746 Micron Technology, Inc. reserves the right to change products or specifications without notice. 1 DDR3L 8Gb x4 x8 2CS TwinDie V90B.pdf - Rev. K 8/18 EN 2011 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice.8Gb: x4, x8 TwinDie DDR3L SDRAM Description Table 2: Addressing Parameter 2048 Meg x 4 1024 Meg x 8 Configuration 128 Meg x 4 x 8 banks x 2 ranks 64 Meg x 8 x 8 banks x 2 ranks Refresh count 8K 8K Row address 64K A 15:0 64K A 15:0 Bank address 8 BA 2:0 8 BA 2:0 Column address 2K A 11, 9:0 1K A 9:0 CCMTD-1725822587-9746 Micron Technology, Inc. reserves the right to change products or specifications without notice. 2 DDR3L 8Gb x4 x8 2CS TwinDie V90B.pdf - Rev. K 8/18 EN 2011 Micron Technology, Inc. All rights reserved.