CM CM50DU-24F Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMOD 50 Amperes/1200 Volts A N D P - NUTS (3 TYP) T MEASURED POINT C Y E C2E1 E2 C1 W Q (2 F PLACES) B X G F Description: Powerex IGBTMOD Modules M K K J are designed for use in switching R applications. Each module con- H (4 PLACES) sists of two IGBT Transistors in a T V T S half-bridge conguration with each U U transistor having a reverse-con- nected super-fast recovery free- C wheel diode. All components and L interconnects are isolated from the heat sinking baseplate, offering simplied system assembly and G2 thermal management. E2 RTC Features: C2E1 Low Drive Power C1 Low V E2 CE(sat) RTC Discrete Super-Fast Recovery Free-Wheel Diode E1 G1 Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Outline Drawing and Circuit Diagram UPS Battery Powered Supplies Dimensions Inches Millimeters Dimensions Inches Millimeters A 3.70 94.0 N 0.28 7.0 Ordering Information: B 1.89 48.0 P M5 M5 Example: Select the complete C 1.18 +0.04/-0.02 30.0 +1.0/-0.5 Q Dia. 0.26 6.5 Dia. module number you desire from D 3.150.01 80.00.25 R 0.02 4.0 the table - i.e. CM50DU-24Fis a E 0.43 11.0 S 0.30 7.5 1200V (V ), 50 Ampere Dual CES F 0.16 4.0 T 0.63 16.0 IGBTMOD Power Module. G 0.71 18.0 U 0.10 2.5 Current Rating V CES H 0.02 0.5 V 1.0 25.0 Type Amperes Volts (x 50) J 0.53 13.5 W 0.94 24.0 CM 50 24 K 0.91 23.0 X 0.51 13.0 L 0.83 21.2 Y 0.47 12.0 M 0.67 17.0 Z 0.47 12.0 11 G1 E1 E2 G2Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50DU-24F Trench Gate Design Dual IGBTMOD 50 Amperes/1200 Volts Absolute Maximum Ratings, T = 25C unless otherwise specied j Ratings Symbol CM50DU-24F Units Junction Temperature T -40 to 150 C j Storage Temperature T -40 to 125 C stg Collector-Emitter Voltage (G-E SHORT) V 1200 Volts CES Gate-Emitter Voltage (C-E SHORT) V 20 Volts GES Collector Current (T = 25C) I 50 Amperes c C Peak Collector Current I 100* Amperes CM Emitter Current** (T = 25C) I 50 Amperes c E Peak Emitter Current** I 100* Amperes EM Maximum Collector Dissipation (T = 25C, T 150C) P 320 Watts c j c Mounting Torque, M5 Main Terminal 31 in-lb Mounting Torque, M6 Mounting 40 in-lb Weight 310 Grams Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) V 2500 Volts iso Static Electrical Characteristics, T = 25C unless otherwise specied j Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current I V = V , V = 0V 1 mA CES CE CES GE Gate Leakage Current I V = V , V = 0V 20 A GES GE GES CE Gate-Emitter Threshold Voltage V I = 5mA, V = 10V 5 6 7 Volts GE(th) C CE Collector-Emitter Saturation Voltage V I = 50A, V = 15V, T = 25C 1.8 2.4 Volts CE(sat) C GE j I = 50A, V = 15V, T = 125C 1.9 Volts C GE j Total Gate Charge Q V = 600V, I = 50A, V = 15V 550 nC G CC C GE Emitter-Collector Voltage** V I = 50A, V = 0V 3.2 Volts EC E GE * Pulse width and repetition rate should be such that the device junction temperature (T ) does not exceed T rating. j j(max) ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 22