MP1907 100V, 2.5A, High Frequency Half-bridge Gate Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP1907 is a high frequency, 100V half Drives N-channel MOSFET half bridge bridge N-channel power MOSFET driver. Its low 100V V voltage range BST side and high side driver channels are Input signal overlap protection independently controlled and matched with less On-chip bootstrap diode than 5ns in time delay. Under-voltage lock-out Typical 20ns propagation delay time both high side and low side supplies force their Less than 5ns gate drive mismatch outputs low in case of insufficient supply. Both Drive 1nF load with 12ns/9ns rise/fall times outputs will remain low until a rising edge on with 12V VDD either input is detected. The integrated TTL compatible input bootstrap diode reduces external component Less than 150 A quiescent current count. Less than 5A shutdown current UVLO for both high side and low side In 33mm QFN10 Packages APPLICATIONS Battery Powered Hand Tool Telecom half bridge power supplies Avionics DC-DC converters Active-clamp Forward Converters All MPS parts are lead-free and adhere to the RoHS directive. For MPS green status, please visit MPS website under Products, Quality Assurance page. MPS and The Future of Analog IC Technology are registered trademarks of Monolithic Power Systems, Inc. TYPICAL APPLICATION 3.3V BATT VDD 13 BST M INH DRVH 7 Floating 4 Driver Micro 5 8 SW INL Controller 10 DRVL Low-side Driver EN 6 9 MP1907 VSS MP1907 Rev. 1.2 www.MonolithicPower.com 1 4/16/2014 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. 2014 MPS. All Rights Reserved. CONTROLMP1907 100V, 2.5A, HIGH FREQUENCY HALF-BRIDGE GATE DRIVER ORDERING INFORMATION Part Number* Package Top Marking MP1907GQ QFN10 (3 x 3 mm) ADE * For Tape & Reel, add suffix Z (e.g. MP1907GQZ) PACKAGE REFERENCE (1) (5) ABSOLUTE MAXIMUM RATINGS Thermal Resistance JA JC Supply Voltage (V ).....................-0.3V to +20V QFN10 (3x3)........................... 50...... 12... C/W DD SW Voltage (V ) .........................-5.0V to 105V SW Notes: BST Voltage (V ) .......................-0.3V to 110V BST 1) Exceeding these ratings may damage the device. BST to SW ....................................-0.3V to +18V 2) The maximum allowable power dissipation is a function of the maximum junction temperature T (MAX), the J DRVH to SW.............. -0.3V to (BST-SW) +0.3V junction-to-ambient thermal resistance , and the JA DRVL to VSS ...................... -0.3V to (V +0.3V) DD ambient temperature T. The maximum allowable A All Other Pins..................................-0.3V to 20V continuous power dissipation at any ambient (2) temperature is calculated by P (MAX) = (T (MAX)- D J Continuous Power Dissipation (T =+25C) A )/ . Exceeding the maximum allowable power T A JA QFN10 (3x3) .............................................. 2.5W dissipation will cause excessive die temperature, and the regulator will go into thermal shutdown. Internal Junction Temperature...............................150C thermal shutdown circuitry protects the device from Lead Temperature ....................................260C permanent damage. 3) The device is not guaranteed to function outside of its Storage Temperature............... -65C to +150 C operating conditions. (3) 4) 4.5V is only a typical value for minimum supply voltage at V DD Recommended Operating Conditions falling (4) 5) Measured on JESD51-7, 4-layer PCB. Supply Voltage (V )................. +4.5V to 18V DD SW Voltage (V ) .........................-1.0V to 100V SW SW slew rate......................................<50V/nsec Operating Junction Temp. (T ). -40C to +125C J MP1907 Rev. 1.2 www.MonolithicPower.com 2 4/16/2014 MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. 2014 MPS. All Rights Reserved.