X-On Electronics has gained recognition as a prominent supplier of NX7002AKW mosfet across the USA, India, Europe, Australia, and various other global locations. NX7002AKW mosfet are a product manufactured by Nexperia. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

NX7002AKW

NX7002AKW electronic component of Nexperia
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See Product Specifications
Part No.NX7002AKW
Manufacturer: Nexperia
Category:MOSFET
Description: MOSFET, SINGLE, N-CH, 60V, 0.17A, SOT323
Datasheet: NX7002AKW Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2801 ea
Line Total: USD 1.4

Availability - 0
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
59867 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 5
Multiples : 1
5 : USD 0.2801
10 : USD 0.2067
100 : USD 0.0772
500 : USD 0.0577
1000 : USD 0.0372
5000 : USD 0.0346

     
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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NX7002AKW 60 V, single N-channel Trench MOSFET 11 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology ESD protected 1.3 Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 170 mA D GS amb Static characteristics R drain-source on-state V = 10 V I = 100 mA T = 25 C - 3 4.5 DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . Scan or click this QR code to view the latest information for this productNXP Semiconductors NX7002AKW 60 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 3 2 S source 3 D drain G 1 2 SC-70 (SOT323) S 017aaa255 3. Ordering information Table 3. Ordering information Type number Package Name Description Version NX7002AKW SC-70 plastic surface-mounted package 3 leads SOT323 4. Marking Table 4. Marking codes Type number Marking code 1 NX7002AKW AH% 1 % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - 60 V DS j V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C 1 - 170 mA D GS amb V = 10 V T = 100 C 1 - 100 mA GS amb I peak drain current T = 25 C single pulse t 10 s - 680 mA DM amb p P total power dissipation T = 25 C 2 - 220 mW tot amb 1 - 255 mW NX7002AKW All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 11 July 2012 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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