X-On Electronics has gained recognition as a prominent supplier of NX7002BKMYL MOSFETs across the USA, India, Europe, Australia, and various other global locations. NX7002BKMYL MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NX7002BKMYL Nexperia

Name: NX7002BKMYL
Brand: Nexperia
SKU: NX7002BKMYL_Nexperia
Availability: OutOfStock
Rating: 5 (11 reviews)

NX7002BKMYL electronic component of Nexperia

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Part No.	NX7002BKMYL
Manufacturer:	Nexperia
Category:	MOSFETs
Description:	N-Channel 60 V 350mA (Ta) 350mW (Ta), 3.1W (Tc) Surface Mount SOT-883
Datasheet:	NX7002BKMYL Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.2182 ea
Line Total: USD 0.22

Availability - 0

MOQ: 1 Multiples: 1
Pack Size: 1

NX7002BKMYL More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
155 Ship by Tue. 20 May to Fri. 23 May MOQ : 10 Multiples : 10	10 : USD 0.0926 100 : USD 0.0738 300 : USD 0.0648 1000 : USD 0.0389 5000 : USD 0.0352 10000 : USD 0.0332

We are delighted to provide the NX7002BKMYL from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NX7002BKMYL and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

NX7002BKM 60 V, N-channel Trench MOSFET 3 December 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2kV HBM 3. Applications Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 350 mA D GS amb Static characteristics R drain-source on-state V = 10 V I = 200 mA T = 25 C - 2.2 2.8 DSon GS D j resistance 2 1 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .Nexperia NX7002BKM 60 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 G gate 1 3 2 S source 2 Transparent 3 D drain G top view DFN1006-3 (SOT883) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version NX7002BKM DFN1006-3 DFN1006-3: leadless ultra small plastic package 3 solder lands SOT883 7. Marking Table 4. Marking codes Type number Marking code NX7002BKM WZ NX7002BKM All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 3 December 2014 2 / 16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

NEXPERIA USA INC
Nexperia USA Inc.

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Manufacturer Nexperia Nexperia
Product Category MOSFETs MOSFETs
Id - Continuous Drain Current 350 mA 350 mA
Vds - Drain-Source Breakdown Voltage 60 V 60 V
Rds On - Drain-Source Resistance 2.2 Ohms 2.2 Ohms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 1.1 V 1.1 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 680 mW 680 mW
Mounting Style Smd/Smt Smd/Smt
Package / Case DFN1006 - 3 DFN1006 - 3
Packaging Reel Reel
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 1 nC 1 nC
Channel Mode Enhancement Enhancement
Brand Nexperia Nexperia
Factory Pack Quantity : 10000 10000
Configuration Single Single
Transistor Type 1 N - Channel 1 N - Channel
Forward Transconductance - Min 600 Ms 600 Ms
Cnhts 8541290000 8541290000
Fall Time 2.9 ns 2.9 ns
Hts Code 8541210095 8541210095
Mxhts 85412999 85412999
Product Type Mosfet Mosfet
Rise Time 4.3 ns 4.3 ns
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000
Typical Turn-Off Delay Time 6.9 ns 6.9 ns
Typical Turn-On Delay Time 4.7 ns 4.7 ns