NTE3086 Optoisolator Dual NPN Transistor Output Description: The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon photo- transistor per channel. This device is constructed with a high voltage insulation, double molded pack- aging process which offers 7.5KV withstand test capability. Features: Two isolated Channels per Package 7500V Withstand Test Voltage CTR Minimum: 20% Absolute Maximum Ratings: Gallium Arsenide LED (Each Channel) Power Dissipation (T = +25 C), P .............................................. 100mW A D Derate Above 25 C ..................................................... 1.3mW/ C Forward Current, I F Continuous ................................................................ 60mA Peak (Pulse Width 1 s, 300pps) ................................................ 3A Phototransistor (Each Channel) Power Dissipation (T = +25 C), P .............................................. 150mW A D Derate Above 25 C ..................................................... 2.0mW/ C Collector Emitter Breakdown Voltage, V ........................................ 30V (BR)CEO Collector Base Breakdown Voltage, V .......................................... 80V (BR)CBO EmitterCollector Breakdown Voltage, V ......................................... 6V (BR)ECO Total Device Power Dissipation (T = +25 C), P .............................................. 400mW A D Derate Above 25 C .................................................... 5.33mW/ C Operating Temperature Range, T ......................................... 55 to +100 C opr Storage Temperature Range, T .......................................... 55 to +150 C stg Lead Temperature (During Soldering, 10sec Max), T ................................ +250 C L Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Gallium Arsenide LED Forward Voltage V I = 20mA 1.1 1.5 V F F Reverse Voltage V I = 10 A 3 25 V R R Reverse Current I V = 3V 10 A R R Junction Capacitance V = 0, f = 1MHz 80 pF Rev. 214Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Phototransistor Detector CollectorEmitter Breakdown Voltage V I = 100 A, I = 0 30 85 V (BR)CEO C F EmitterCollector Breakdown Voltage V I = 100 A, I = 0 6 13 V (BR)ECO E F CollectorBase Breakdown Voltage V I = 10 A, I = 0 80 V (BR)CBO C F CollectorEmitter Leakage Current I V = 10V, I = 0 5 100 nA CEO CE F CollectorEmitter Capacitance C V = 0, I = 0 8 pF CE CE F Coupled Electrical Characteristics CollectorEmitter Saturation Voltage V I = 2mA, I = 16mA 0.2 0.4 V CE(sat) C F DC Current Transfer Ratio CTR V = 10V, I = 10mA 20 50 % CE F Isolation Voltage V t = 1sec 1500 2500 V (BR)(IO) 11 12 Isolation Resistance R V = 500V 10 10 (IO) IO Input to Output Capacitance f = 1MHz 0.4 pF Bandwidth BW I = 2mA, V = 10V, R = 100 150 kHz C CC L Switching Times NonSaturated Rise Time, Fall Time t , t V = 10V, I = 2mA, R = 100 , 2.4 s r f CC C L Note 1 NonSaturated Rise Time, Fall Time t , t V = 10V, I = 2mA, R = 1k , 15 s r f CC C L Note 1 Saturated TurnOn Time t R = 2k , I = 40mA 5 s on(sat) L F (From 5V to 0.8V) Saturated TurnOff Time t R = 2k , I = 40mA 25 s off(sat) L F (From Saturation to 2V) Note 1. The frequency at which I is 3dB down from the 1kHz value. C Anode 1 8 Emitter 2 7 Cathode Collector Cathode 3 6 Collector Anode 4 5 Emitter