X-On Electronics has gained recognition as a prominent supplier of NTE3086 Transistor Output Optocouplers across the USA, India, Europe, Australia, and various other global locations. NTE3086 Transistor Output Optocouplers are a product manufactured by NTE. We provide cost-effective solutions for Transistor Output Optocouplers, ensuring timely deliveries around the world.

NTE3086 NTE

NTE3086 electronic component of NTE
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See Product Specifications
Part No.NTE3086
Manufacturer: NTE
Category: Transistor Output Optocouplers
Description: Optocoupler DC-IN 2-CH Transistor DC-OUT 8-Pin PDIP
Datasheet: NTE3086 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 5.5388 ea
Line Total: USD 55.39 
Availability - 28
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ: 10  Multiples: 1
Pack Size: 1
Availability Price Quantity
28
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 10
Multiples : 1
10 : USD 5.5388
50 : USD 4.8563
250 : USD 4.2656
500 : USD 4.0293
1000 : USD 3.9244
2500 : USD 3.8194
5000 : USD 3.7537
7500 : USD 3.6225

24
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 6.9825
5 : USD 4.2924
12 : USD 4.0572

   
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Product Category
RoHS - XON
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE3086 from our Transistor Output Optocouplers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE3086 and other electronic components in the Transistor Output Optocouplers category and beyond.

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NTE3086 Optoisolator Dual NPN Transistor Output Description: The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon photo- transistor per channel. This device is constructed with a high voltage insulation, double molded pack- aging process which offers 7.5KV withstand test capability. Features: Two isolated Channels per Package 7500V Withstand Test Voltage CTR Minimum: 20% Absolute Maximum Ratings: Gallium Arsenide LED (Each Channel) Power Dissipation (T = +25 C), P .............................................. 100mW A D Derate Above 25 C ..................................................... 1.3mW/ C Forward Current, I F Continuous ................................................................ 60mA Peak (Pulse Width 1 s, 300pps) ................................................ 3A Phototransistor (Each Channel) Power Dissipation (T = +25 C), P .............................................. 150mW A D Derate Above 25 C ..................................................... 2.0mW/ C Collector Emitter Breakdown Voltage, V ........................................ 30V (BR)CEO Collector Base Breakdown Voltage, V .......................................... 80V (BR)CBO EmitterCollector Breakdown Voltage, V ......................................... 6V (BR)ECO Total Device Power Dissipation (T = +25 C), P .............................................. 400mW A D Derate Above 25 C .................................................... 5.33mW/ C Operating Temperature Range, T ......................................... 55 to +100 C opr Storage Temperature Range, T .......................................... 55 to +150 C stg Lead Temperature (During Soldering, 10sec Max), T ................................ +250 C L Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Gallium Arsenide LED Forward Voltage V I = 20mA 1.1 1.5 V F F Reverse Voltage V I = 10 A 3 25 V R R Reverse Current I V = 3V 10 A R R Junction Capacitance V = 0, f = 1MHz 80 pF Rev. 214Electrical Characteristics (Contd): (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Phototransistor Detector CollectorEmitter Breakdown Voltage V I = 100 A, I = 0 30 85 V (BR)CEO C F EmitterCollector Breakdown Voltage V I = 100 A, I = 0 6 13 V (BR)ECO E F CollectorBase Breakdown Voltage V I = 10 A, I = 0 80 V (BR)CBO C F CollectorEmitter Leakage Current I V = 10V, I = 0 5 100 nA CEO CE F CollectorEmitter Capacitance C V = 0, I = 0 8 pF CE CE F Coupled Electrical Characteristics CollectorEmitter Saturation Voltage V I = 2mA, I = 16mA 0.2 0.4 V CE(sat) C F DC Current Transfer Ratio CTR V = 10V, I = 10mA 20 50 % CE F Isolation Voltage V t = 1sec 1500 2500 V (BR)(IO) 11 12 Isolation Resistance R V = 500V 10 10 (IO) IO Input to Output Capacitance f = 1MHz 0.4 pF Bandwidth BW I = 2mA, V = 10V, R = 100 150 kHz C CC L Switching Times NonSaturated Rise Time, Fall Time t , t V = 10V, I = 2mA, R = 100 , 2.4 s r f CC C L Note 1 NonSaturated Rise Time, Fall Time t , t V = 10V, I = 2mA, R = 1k , 15 s r f CC C L Note 1 Saturated TurnOn Time t R = 2k , I = 40mA 5 s on(sat) L F (From 5V to 0.8V) Saturated TurnOff Time t R = 2k , I = 40mA 25 s off(sat) L F (From Saturation to 2V) Note 1. The frequency at which I is 3dB down from the 1kHz value. C Anode 1 8 Emitter 2 7 Cathode Collector Cathode 3 6 Collector Anode 4 5 Emitter

Tariff Desc

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