NTE3094 Optoisolator Dual, High Speed, Open Collector NAND Gate Description: The NTE3094 consists of a pair of inverting optically coupled gates each with a GaAsP emitting diode and a unique integrated detector. The photons are collected in the detector by a photodiode and then amplified by a high gain linear amplifier that drives a Schottky clamped open collector output transis- tor. each circuit is temperature, current and voltage compensated. This unique isolator design provides maximum DC and AC circuit isolation between input and output while achieving LSTTL/TTL circuit compatibility. The isolator operational parameters are guaranteed from 0 to +70C, such that a minimum input current of 5mA will sink an eight gate fanout (13mA) at the output with 5 volt V applied to the detector. This isolation and coupling is achieved with a CC typical propagation delay of 57ns. Features: LSTTL/TTL Compatible: 5V Supply Ultra High Speed Low Input Current Required High Common Mode Rejection 3000V DC Withstand Test Voltage Typical Data Rate 10M/Bit(s) Absolute Maximum Ratings: (T = +25C unless otherwise specified) A Input Diode (Each Channel) Reverse Voltage, V . 5V R Forward Current, I F Average . 15mA Peak ( 1ms Duration) 30mA Output Transistor (Each Channel) Supply Voltage (1 Minute Maximum), V 7V CC Output Voltage, V 7V O Output Current, I 16mA O Collector Power Dissipation, P 60mW D Total Device Operating Temperature Range, T . 0 to +70C opr Storage Temperature Range, T 55 to +125C stg Lead Temperature (During Soldering, 1.6mm below seating plane, 10sec Max), T +260C LRecommended Operating Conditions: Parameter Symbol Test Conditions Min Typ Max Unit Input Current, Low Level (Each Channel) I 0 250 A FL Input Current, High Level (Each Channel) I Note 1 6.3 15 mA FH Supply Voltage, Output V 4.5 5.5 V CC Fan Out (TTL Load) N 8 Operating Temperature T 0 70 C A Note 1. 6.3mA condition permits at least 20% CTR degradation guardband. Initial switching threshold is 5mA or less. Electrical Characteristics: (T = 0 to +70C, Note 2 unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit High Level Output Current I V = 5.V, V = 5.5V, I = 250 A, Note 3 40 250 A OH CC O F Low Level Output Voltage V V = 5.5V, I = 5mA, I = 13mA, Note 3 0.4 0.6 V OL CC F OL(sinking) High Level Supply Current I V = 5.V, I = 0, (Both Channels) 15 30 mA CCH CC F Low Level Supply Current I V = 5.V, I = 10mA, (Both Channels) 27 36 mA CCL CC F InputOutput Insulation I Relative Humidity = 45%, T = +25C, t = 5s, 1.0 A IO A Leakage Current V = 3000V DC, Note 4 IO 12 Resistance R V = 500V, T = +25C, Note 4 10 IO IO A Capacitance C f = 1MHz, T = +25C, Note 4 0.6 pF IO A Input Forward Voltage V I = 10mA, T = +25C, Note 3, Note 5 1.5 1.75 V F F A Input Reverse Breakdown V I = 10 A, T = +25C 5 V (BR)R R A Voltage Input Capacitance C V = 0, f = 1MHz, Note 3 60 pF IN F Current Transfer Ratio CTR I = 5mA, R = 100 , Note 6 700 % F L 11 Resistance (InputInput) R V = 500V, Note 7 10 II II Capacitance (InputInput) C f = 1MHz, Note 7 0.27 pF II Note 2. All typicals at T = +25C, V = 5V unless otherwise specified. A CC Note 3. Each channel. Note 4. Measured between Pin1, Pin2, Pin3 and Pin4 shorted together and Pin5, Pin6, Pin7 and Pin8 shorted together. Note 5. At 10mA, V decreases with increasing temperature at the rate of 1.6mV/C. F Note 6. DC Current Transfer Ratio is defined as the ratio of the output collector current to the forward bias input current times 100%. Note 7. Measured between Pin1 and Pin2 shorted together and Pin3 and Pin4 shorted together.