NTE451 Silicon NChannel JFET Transistor VHF/UHF Amplifier TO92 Type Package Absolute Maximum Ratings: DrainGate Voltage, V ............................................................ 25V DG Reverse Gate Source Voltage, V ................................................. 25V GSR Drain Current, I ................................................................. 30mA D Total Device Dissipation (T = +25 C), P ......................................... 350mW C D Derate Above 25 C ..................................................... 2.8mW/ C Operating Junction Temperature Range, T .................................. 65 to +150 C J Storage Temperature Range, T .......................................... 65 to +150 C stg Electrical Characteristics: (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics GateSource Breakdown Voltage V I = 1 A, V = 0 25 V (BR)GSS G DS Gate Reverse Current I V = 20V, V = 0 1.0 nA GSS GS DS V = 20V, V = 0, T = +100 C 0.2 nA GS DS A GateSource Cutoff Voltage V I = 10nA, V = 15V 0.5 4.0 V GS(off) D DS ON Characteristics ZeroGateVoltage Drain Current I V = 15V, V = 0 4 20 mA DSS DS GS Small Signal Characteristics Characteristics Forward Transfer Admittance y V = 15V, V = 0, f = 1kHz 3500 7000 mho fs DS GS Input Admittance Re(y ) V = 15V, V = 0, f = 400MHz 1000 mho is DS GS Output Admittance y V = 15V, V = 0, f = 1kHz 60 mho os DS GS Output Conductance Re(y ) V = 15V, V = 0, f = 400MHz 100 mho os DS GS Forward Transconductance g V = 15V, V = 0, f = 400MHz 3000 mho fs DS GS Input Capacitance C V = 15V, V = 0, f = 1MHz 5 pF iss DS GS Reverse Transfer Capacitance C V = 15V, V = 0, f = 1MHz 1 pF rss DS GS Output Capacitance C V = 15V, V = 0, f = 1MHz 2 pF oss DS GS Rev. 1013Electrical Characteristics Contd): (T = +25 C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit Functional Characteristics Noise Figure NF V = 15V, I = 4mA, f = 100MHz 2 dB DS D R 1k G f = 400MHz 4 dB Common Source Power Gain G V = 15V, I = 4mA f = 100MHz 18 30 dB ps DS D f = 400MHz 10 20 dB .135 (3.45) Min D G .210 S (5.33) Max Seating Plane .021 (.445) Dia Max .500 (12.7) Min D S G .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .105 (2.67) Max .205 (5.2) Max