X-On Electronics has gained recognition as a prominent supplier of BLS6G2735LS-30,112 rf mosfet transistors across the USA, India, Europe, Australia, and various other global locations. BLS6G2735LS-30,112 rf mosfet transistors are a product manufactured by NXP. We provide cost-effective solutions for rf mosfet transistors, ensuring timely deliveries around the world.

BLS6G2735LS-30,112 NXP

BLS6G2735LS-30,112 electronic component of NXP
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Part No.BLS6G2735LS-30,112
Manufacturer: NXP
Category:RF MOSFET Transistors
Description: RF MOSFET Transistors 60V 580mOhms
Datasheet: BLS6G2735LS-30,112 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 267.1045 ea
Line Total: USD 267.1

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 11 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 267.1045

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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BLS6G2735L-30 BLS6G2735LS-30 S-band LDMOS transistor Rev. 4 1 September 2015 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1. Application information Typical RF performance at T =25 C t = 300 s = 10 % I = 50 mA. case p Dq Test signal f V P G t t DS L p D r f (GHz) (V) (W) (dB) (%) (ns) (ns) Typical RF performance in a class-AB production test circuit in band 3.1 GHz to 3.5 GHz pulsed RF 3.1 to 3.5 32 30 13 50 20 10 Typical RF performance in an application circuit in small band 2.7 GHz to 3.3 GHz pulsed RF 2.7 to 3.3 32 35 14 50 20 10 Typical RF performance in an application circuit in small band 2.7 GHz to 3.5 GHz pulsed RF 2.7 to 3.5 32 30 12 47 20 10 1.2 Features and benefits Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2.7 GHz to 3.5 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications S-band radar applications in the frequency range 2.7 GHz to 3.5 GHzBLS6G2735L-30 BLS6G2735LS-30 S-band LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLS6G2735L-30 (SOT1135A) 1drain 1 1 2gate 1 3source 2 3 3 sym112 2 BLS6G2735LS-30 (SOT1135B) 1drain 1 1 2gate 1 3source 2 3 3 sym112 2 1 Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLS6G2735L-30 - flanged ceramic package 2 mounting holes 2 leads SOT1135A BLS6G2735LS-30 - earless flanged ceramic package 2 leads SOT1135B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit V drain-source voltage - 60 V DS V gate-source voltage 0.5 +13 V GS T storage temperature 65 +150 C stg T junction temperature - 225 C j BLS6G2735L-30 6G2735LS-30 4 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 4 1 September 2015 2 of 17

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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