Product Information

BLS6G3135S-120,112

BLS6G3135S-120,112 electronic component of NXP

Datasheet
RF MOSFET Transistors TRANS S-BAND RADAR LDMSO
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 462.3138 ea
Line Total: USD 462.31

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1
1 : USD 462.3138

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Operating Frequency
Gain
Output Power
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Brand
Factory Pack Quantity :
Vgs - Gate-Source Breakdown Voltage
Vgs Th - Gate-Source Threshold Voltage
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Additional Infomation About Product

BLS6G3135-120 BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 3 1 September 2015 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance Typical RF performance at T = 25 C t = 300 s = 10 % I = 100 mA in a class-AB case p Dq production test circuit. Mode of operation f V P G t t DS L p D r f (GHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 3.1 to 3.5 32 120 11 43 20 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features Typical pulsed RF performance at a frequency of 3.1 GHz to 3.5 GHz, a supply voltage of 32 V, an I of 100 mA, a t of up to 300 s with of 10 %: Dq p Output power = 120 W Gain = 11 dB Efficiency = 43 % Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (3.1 GHz to 3.5 GHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)BLS6G3135-120 BLS6G3135S-120 LDMOS S-Band radar power transistor 1.3 Applications S-Band power amplifiers for radar applications in the 3.1 GHz to 3.5 GHz frequency range 2. Pinning information Table 2. Pinning Pin Description Simplified outline Symbol BLS6G3135-120 (SOT502A) 1 drain 1 1 2 gate 3 1 3 source 2 2 3 sym112 BLS6G3135S-120 (SOT502B) 1 drain 1 1 2 gate 3 1 3 source 2 2 3 sym112 1 Connected to flange 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BLS6G3135-120 - flanged LDMOST ceramic package 2 mounting holes SOT502A 2 leads BLS6G3135S-120 - earless flanged LDMOST ceramic package 2 leads SOT502B 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Min Max Unit V drain-source voltage - 60 V DS V gate-source voltage 0.5 +13 V GS I drain current - 7.2 A D T storage temperature 65 +150 C stg T junction temperature - 225 C j BLS6G3135-120 6G3135S-120 3 All information provided in this document is subject to legal disclaimers. Ampleon The Netherlands B.V. 2015. All rights reserved. Product data sheet Rev. 3 1 September 2015 2 of 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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