BYV25FD-600,118

BYV25FD-600 Enhanced ultrafast power diode Rev. 02 7 March 2011 Product data sheet 1. Product profile 1.1 General description Enhanced ultrafast power diode in a SOT428 (DPAK) plastic package. 1.2 Features and benefits High thermal cycling performance Soft recovery characteristic Low on-state losses Surface-mountable package Low thermal resistance 1.3 Applications Dual Mode (DCM and CCM) PFC Power Factor Correction (PFC) for Interleaved Topology 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak --600V RRM reverse voltage I average forward square-wave pulse =0.5 --5 A F(AV) current T 121 C see Figure 1 mb see Figure 2 Static characteristics V forward voltage I =5A T =25C -1.3 1.9 V F F j see Figure 5 I =5A T =150 C -1.1 1.7 V F j see Figure 5 Dynamic characteristics t reverse recovery I =1A V =30V -17.535 ns rr F R time dI /dt = 100 A/s T =25C F j see Figure 6 DPAKBYV25FD-600 NXP Semiconductors Enhanced ultrafast power diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 n.c. not connected mb K A 1 2 K cathode 001aaa020 3 A anode mb K mounting base cathode 2 1 3 SOT428 (DPAK) 1 It is not possible to connect to pin 2 of the SOT428 package. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV25FD-600 DPAK plastic single-ended surface-mounted package (DPAK) 3 leads SOT428 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse voltage - 600 V RRM V crest working reverse voltage - 600 V RWM V reverse voltage DC - 600 V R I average forward current square-wave pulse = 0.5 -5 A F(AV) T 121 C see Figure 1 mb see Figure 2 I repetitive peak forward current square-wave pulse =0.5 t = 25 s -10 A FRM p T 121 C mb I non-repetitive peak forward t = 10 ms sine-wave pulse -60 A FSM p current T = 25 C see Figure 3 j(init) t = 8.3 ms sine-wave pulse -66 A p T = 25 C see Figure 3 j(init) T storage temperature -40 150 C stg T junction temperature - 150 C j BYV25FD-600 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 7 March 2011 2 of 12