Product Information

BYV25FX-600

BYV25FX-600 electronic component of NXP

Datasheet
DIODE, ULTRAFAST, 5A, 600V, TO220F
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7878 ea
Line Total: USD 0.79

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1
1 : USD 0.7878
10 : USD 0.688
25 : USD 0.5335
100 : USD 0.4532
250 : USD 0.3908
500 : USD 0.3697

Read More Specifications

     
Manufacturer
Product Category
Diode Configuration
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Forward Voltage Vf Max
Reverse Recovery Time Trr Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Diode Case Style
No Of Pins
Packaging
Svhc
Diode Type
LoadingGif

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Additional Infomation About Product

BYV25FX-600 Enhanced ultrafast power diode Rev. 02 7 March 2011 Product data sheet 1. Product profile 1.1 General description Enhanced ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package. 1.2 Features and benefits High thermal cycling performance Low thermal resistance Isolated package Soft recovery characteristic Low on-state losses 1.3 Applications Dual Mode (DCM and CCM) PFC Power Factor Correction (PFC) for Interleaved Topology 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak --600V RRM reverse voltage I average forward square-wave pulse = 0.5 --5 A F(AV) current T 97 C h see Figure 1 see Figure 2 Static characteristics V forward voltage I =5A T =25C -1.3 1.9 V F F j see Figure 5 I =5A T =150 C -1.1 1.7 V F j see Figure 5 Dynamic characteristics t reverse recovery I =1A V =30V -17.535 ns rr F R time dI /dt = 100 A/s T =25C F j see Figure 6 TO-220FBYV25FX-600 NXP Semiconductors Enhanced ultrafast power diode 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb K A 2 A anode 001aaa020 mb n.c. mounting base isolated 1 2 SOD113 (TO-220F) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BYV25FX-600 TO-220F plastic single-ended package isolated heatsink mounted 1 SOD113 mounting hole 2-lead TO-220full pac 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V repetitive peak reverse voltage - 600 V RRM V crest working reverse voltage - 600 V RWM V reverse voltage DC - 600 V R I average forward current square-wave pulse = 0.5 -5 A F(AV) T 97 C h see Figure 1 see Figure 2 I repetitive peak forward current square-wave pulse =0.5 t = 25 s -10 A FRM p T 97 C h I non-repetitive peak forward t = 10 ms sine-wave pulse -60 A FSM p current T = 25 C see Figure 3 j(init) t = 8.3 ms sine-wave pulse -66 A p T = 25 C see Figure 3 j(init) T storage temperature -40 150 C stg T junction temperature - 150 C j BYV25FX-600 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 02 7 March 2011 2 of 11

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