DocumentNumber:MRF6V2010N FreescaleSemiconductor Rev. 5, 4/2010 Technical Data RFPowerFieldEffectTransistors N--Channel Enhancement--ModeLateral MOSFETs MRF6V2010NR1 Designed primarily for CW large--signal output and driver applications with MRF6V2010NBR1 frequenciesupto450MHz.Devicesareunmatchedandaresuitableforusein industrial, medical and scientific applications. Typical CW Performance at 220 MHz: V =50Volts,I =30mA, DD DQ P = 10Watts out 10--450MHz,10W,50V Power Gain 23.9 dB LATERALN--CHANNEL Drain Efficiency 62% BROADBAND Capable of Handling 10:1 VSWR, 50 Vdc, 220 MHz, 10 Watts CW RFPOWERMOSFETs Output Power Features Characterized with Series Equivalent Large--Signal Impedance Parameters Qualified Up to a Maximum of 50 V Operation DD Integrated ESD Protection CASE1265--09,STYLE1 225C Capable Plastic Package TO--270--2 PLASTIC RoHS Compliant MRF6V2010NR1 TO--270--2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. TO--272--2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. CASE1337--04,STYLE1 TO--272--2 PLASTIC MRF6V2010NBR1 Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5, +110 Vdc DSS Gate--Source Voltage V --0.5, +10 Vdc GS Storage Temperature Range T --65 to +150 C stg Case Operating Temperature T 150 C C (1,2) Operating Junction Temperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance, Junction to Case Case Temperature 81C, 10 W CW R 3.0 C/W JC 1. Continuous use at maximum temperature willaffect MTTF. 2. MTTFcalculatoravailable at Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model(perJESD22--A114) 2 (Minimum) Machine Model(perEIA/JESD22--A115) A (Minimum) Charge Device Model(perJESD22--C101) IV (Minimum) Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113, IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Gate--Source Leakage Current I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--Source Breakdown Voltage V 110 Vdc (BR)DSS (I =5mA,V =0Vdc) D GS Zero Gate Voltage Drain Leakage Current I 50 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 2.5 mA DSS (V =100 Vdc, V =0Vdc) DS GS OnCharacteristics Gate Threshold Voltage V 1 1.68 3 Vdc GS(th) (V =10Vdc,I =28Adc) DS D Gate Quiescent Voltage V 1.5 2.68 3.5 Vdc GS(Q) (V =50Vdc,I =30 mAdc, Measured in FunctionalTest) DD D Drain--Source On--Voltage V 0.26 Vdc DS(on) (V =10Vdc,I =70mAdc) GS D DynamicCharacteristics Reverse TransferCapacitance C 0.13 pF rss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Output Capacitance C 7.3 pF oss (V =50Vdc 30 mV(rms)ac 1 MHz, V =0Vdc) DS GS Input Capacitance C 16.3 pF iss (V =50Vdc,V =0Vdc 30 mV(rms)ac 1 MHz) DS GS FunctionalTests(In Freescale Test Fixture, 50 ohm system)V =50Vdc,I =30mA,P =10W,f=220MHz,CW DD DQ out PowerGain G 22.5 23.9 25.5 dB ps Drain Efficiency 58 62 % D Input Return Loss IRL --14 --9 dB ATTENTION: The MRF6V2010N and MRF6V2010NB are high powerdevices and specialconsiderations must be followed in board design and mounting. Incorrect mounting can lead to internaltemperatures which exceed the maximum allowable operating junction temperature. Referto Freescale Application Note AN3263 (forbolt down mounting)orAN1907 (forsolderreflow mounting)PRIORTOSTARTINGSYSTEMDESIGNto ensure propermounting of these devices. MRF6V2010NR1MRF6V2010NBR1 RF DeviceData Freescale Semiconductor 2