DocumentNumber:MRF6VP2600H FreescaleSemiconductor Rev. 5.1, 7/2010 TechnicalData RFPowerFieldEffectTransistor N--Channel Enhancement--ModeLateral MOSFET MRF6VP2600HR6 Designedprimarily for widebandapplications withfrequencies upto 500MHz. Deviceis unmatchedandis suitableforuseinbroadcastapplications. Typical DVB--T OFDM Performance: V =50Volts,I = 2600mA, DD DQ P = 125Watts Avg., f = 225MHz, ChannelBandwidth= 7.61MHz, out 2--500MHz,600W,50V Input Signal PAR = 9.3dB 0.01%Probability onCCDF. LATERALN--CHANNEL Power Gain 25dB BROADBAND DrainEfficiency 28.5% RFPOWERMOSFET ACPR 4MHz Offset --61dBc 4kHz Bandwidth Typical PulsedPerformance: V =50Volts,I = 2600mA, DD DQ P = 600Watts Peak, f = 225MHz, PulseWidth= 100 sec, Duty out Cycle= 20% Power Gain 25.3dB Drain Efficiency 59% Capableof Handling10:1VSWR, 50Vdc, 225MHz, 600Watts Peak Power, PulseWidth= 100 sec, Duty Cycle= 20% Features CharacterizedwithSeries Equivalent Large--Signal ImpedanceParameters CASE375D--05,STYLE1 CW OperationCapability withAdequateCooling NI--1230 QualifiedUptoaMaximum of 50V Operation DD PARTISPUSH--PULL IntegratedESD Protection Designedfor Push--Pull Operation Greater NegativeGate--SourceVoltageRangefor ImprovedClass C Operation RoHSCompliant InTapeandReel. R6Suffix = 150Units per 56mm, 13inchReel. RF /V31 RF /V inA GSA outA DSA RF /V42 RF /V inB GSB outB DSB (Top View) Figure1.PinConnections Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V --0.5,+110 Vdc DSS Gate--SourceVoltage V --6.0,+10 Vdc GS StorageTemperatureRange T --65to+150 C stg CaseOperatingTemperature T 150 C C (1,2) OperatingJunctionTemperature T 225 C J Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R C/W JC CaseTemperature99C,125W CW,225MHz,50Vdc,I =2600mA 0.20 DQ CaseTemperature64C,610W CW,352.2MHz,50Vdc,I =150mA 0.14 DQ CaseTemperature81C,610W CW,88--108MHz,50Vdc,I =150mA 0.16 DQ 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailableat Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 2(Minimum) MachineModel(perEIA/JESD22--A115) A (Minimum) ChargeDeviceModel(perJESD22--C101) IV (Minimum) Table4.ElectricalCharacteristics (T =25Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit (1) OffCharacteristics Gate--SourceLeakageCurrent I 10 Adc GSS (V =5Vdc,V =0Vdc) GS DS Drain--SourceBreakdownVoltage V 110 Vdc (BR)DSS (I =150mA,V =0Vdc) D GS Zero Gate Voltage Drain Leakage Current I 50 Adc DSS (V =50Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 2.5 mA DSS (V =100Vdc,V =0Vdc) DS GS OnCharacteristics (1) GateThresholdVoltage V 1 1.65 3 Vdc GS(th) (V =10Vdc,I =800 Adc) DS D (2) GateQuiescentVoltage V 1.5 2.7 3.5 Vdc GS(Q) (V =50Vdc,I =2600mAdc,MeasuredinFunctionalTest) DD D (1) Drain--SourceOn--Voltage V 0.25 Vdc DS(on) (V =10Vdc,I =2Adc) GS D (1) DynamicCharacteristics ReverseTransferCapacitance C 1.7 pF rss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS OutputCapacitance C 101 pF oss (V =50Vdc 30mV(rms)ac 1MHz,V =0Vdc) DS GS InputCapacitance C 287 pF iss (V =50Vdc,V =0Vdc 30mV(rms)ac 1MHz) DS GS (2) FunctionalTests (InFreescaleTestFixture,50ohm system)V =50Vdc,I =2600mA,P =125W Avg.,f=225MHz,DVB--T DD DQ out OFDM SingleChannel. ACPRmeasuredin7.61MHz ChannelBandwidth 4MHzOffset. PowerGain G 24 25 27 dB ps Drain Efficiency 27 28.5 % D Adjacent ChannelPowerRatio ACPR --61 --59 dBc Input ReturnLoss IRL --18 --9 dB TypicalPerformance352.2MHz (InFreescale352.2MHz TestFixture,50ohm system)V =50Vdc,I =150mA,P =600W CW DD DQ out PowerGain G 22 dB ps Drain Efficiency 68 % D Input ReturnLoss IRL --15 dB TypicalPerformance88--108MHz (InFreescale88--108MHz TestFixture,50ohm system)V =50Vdc,I =150mA,P =600W DD DQ out CW PowerGain G 24.5 dB ps Drain Efficiency 74 % D Input ReturnLoss IRL --5 dB 1. Eachsideofdevicemeasuredseparately. 2. Measurementmadewithdevicein push--pullconfiguration. MRF6VP2600HR6 RF DeviceData FreescaleSemiconductor 2