X-On Electronics has gained recognition as a prominent supplier of 2N6036G darlington transistors across the USA, India, Europe, Australia, and various other global locations. 2N6036G darlington transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for darlington transistors, ensuring timely deliveries around the world.

2N6036G ON Semiconductor

2N6036G electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No.2N6036G
Manufacturer: ON Semiconductor
Category:Darlington Transistors
Description: Darlington Transistors 4A 80V Bipolar Power PNP
Datasheet: 2N6036G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.701 ea
Line Total: USD 1.7

Availability - 615
Ships to you between
Mon. 17 Jun to Thu. 20 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
539 - WHS 1


Ships to you between
Mon. 17 Jun to Thu. 20 Jun

MOQ : 1
Multiples : 1
1 : USD 1.1973
10 : USD 1.0846
30 : USD 1.0226
100 : USD 0.9512
500 : USD 0.8384
1000 : USD 0.8234

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Pd - Power Dissipation
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Continuous Collector Current
Cnhts
Dc Collector/Base Gain Hfe Min
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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We are delighted to provide the 2N6036G from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6036G and other electronic components in the Darlington Transistors category and beyond.

2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) Plastic Darlington Complementary Silicon 2N6034G, 2N6035G, 2N6036G (PNP), 2N6038G, 2N6039G (NPN) ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage V Vdc CEO(sus) (I = 100 mAdc, I = 0) C B 2N6034G 40 2N6035G, 2N6038G 60 2N6036G, 2N6039G 80 CollectorCutoff Current I A CEO (V = 40 Vdc, I = 0) CE B 2N6034G 100 (V = 60 Vdc, I = 0) CE B 2N6035G, 2N6038G 100 (V = 80 Vdc, I = 0) CE B 2N6036G, 2N6039G 100 CollectorCutoff Current I A CEX (V = 40 Vdc, V = 1.5 Vdc) CE BE(off) 2N6034G 100 (V = 60 Vdc, V = 1.5 Vdc) CE BE(off) 2N6035G, 2N6038G 100 (V = 80 Vdc, V = 1.5 Vdc) CE BE(off) 2N6036G, 2N6039G 100 (V = 40 Vdc, V = 1.5 Vdc, T = 125 C) CE BE(off) C 2N6034G 500 (V = 60 Vdc, V = 1.5 Vdc, T = 125 C) CE BE(off) C 2N6035G, 2N6038G 500 (V = 80 Vdc, V = 1.5 Vdc, T = 125 C) CE BE(off) C 500 2N6036G, 2N6039G CollectorCutoff Current I mAdc CBO (V = 40 Vdc, I = 0) CB E 2N6034G 0.5 (V = 60 Vdc, I = 0) CB E 2N6035G, 2N6038G 0.5 (V = 80 Vdc, I = 0) CB E 2N6036G, 2N6039G 0.5 EmitterCutoff Current I mAdc EBO (V = 5.0 Vdc, I = 0) 2.0 BE C ON CHARACTERISTICS DC Current Gain h FE (I = 0.5 Adc, V = 3.0 Vdc) 500 C CE (I = 2.0 Adc, V = 3.0 Vdc) 750 15,000 C CE (I = 4.0 Adc, V = 3.0 Vdc) 100 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 2.0 Adc, I = 8.0 mAdc) C B 2.0 (I = 4.0 Adc, I = 40 mAdc) C B 3.0 BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 4.0 Adc, I = 40 mAdc) 4.0 C B BaseEmitter On Voltage V Vdc BE(on) (I = 2.0 Adc, V = 3.0 Vdc) 2.8 C CE DYNAMIC CHARACTERISTICS SmallSignal CurrentGain h 25 fe (I = 0.75 Adc, V = 10 Vdc, f = 1.0 MHz) C CE Output Capacitance C pF ob (V = 10 Vdc, I = 0, f = 0.1 MHz) CB E 2N6034G, 2N6035G, 2N6036G 200 2N6038G, 2N6039G 100 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Indicates JEDEC Registered Data.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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