X-On Electronics has gained recognition as a prominent supplier of 2N6052G darlington transistors across the USA, India, Europe, Australia, and various other global locations. 2N6052G darlington transistors are a product manufactured by ON Semiconductor. We provide cost-effective solutions for darlington transistors, ensuring timely deliveries around the world.

2N6052G ON Semiconductor

2N6052G electronic component of ON Semiconductor
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See Product Specifications
Part No.2N6052G
Manufacturer: ON Semiconductor
Category:Darlington Transistors
Description: Bipolar (BJT) Transistor PNP - Darlington 100 V 12 A 150 W Through Hole TO-204 (TO-3)
Datasheet: 2N6052G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
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Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 100
Multiples : 100
100 : USD 7.1594
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 17.612
10 : USD 15.3293
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1
1 : USD 13.2415
10 : USD 11.3145
50 : USD 10.5544
100 : USD 8.9781
200 : USD 8.58
N/A

Obsolete
0 - WHS 4

MOQ : 100
Multiples : 100
100 : USD 4.3424
200 : USD 4.3424
300 : USD 4.3424
400 : USD 4.3424
N/A

Obsolete
0 - WHS 5

MOQ : 100
Multiples : 83
100 : USD 8.7706
200 : USD 8.3523
400 : USD 8.327
600 : USD 8.3018
800 : USD 8.2765
1000 : USD 8.2513
10000 : USD 8.226
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Obsolete
0 - WHS 6

MOQ : 1
Multiples : 1
1 : USD 9.6275
10 : USD 8.3556
50 : USD 7.9709
100 : USD 6.9131
600 : USD 6.0156
1000 : USD 5.6737
N/A

Obsolete
0 - WHS 7

MOQ : 81
Multiples : 81
81 : USD 4.1993
200 : USD 3.8969
500 : USD 3.819
N/A

Obsolete
0 - WHS 8

MOQ : 100
Multiples : 100
100 : USD 5.3567
200 : USD 5.021
N/A

Obsolete
0 - WHS 9

MOQ : 100
Multiples : 100
100 : USD 4.5243
200 : USD 4.1822
500 : USD 4.0986
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Pd - Power Dissipation
Mounting Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Power Dissipation
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Dc Current Gain Hfe Max
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 2N6052G from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N6052G and other electronic components in the Darlington Transistors category and beyond.

2N6052 Preferred Device Darlington Complementary Silicon Power Transistors This package is designed for generalpurpose amplifier and low frequency switching applications. Features 2N6052 ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted) (Note 2) C Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 3) (I = 100 mAdc, I = 0) V 100 Vdc C B CEO(sus) Collector Cutoff Current (V = 50 Vdc, I = 0) I 1.0 mAdc CE B CEO Collector Cutoff Current I mAdc CEX (V = Rated V , V = 1.5 Vdc) CE CEO BE(off) 0.5 (V = Rated V , V = 1.5 Vdc, T = 150 C) CE CEO BE(off) C 5.0 Emitter Cutoff Current (V = 5.0 Vdc, I = 0) I 2.0 mAdc BE C EBO ON CHARACTERISTICS (Note 3) DC Current Gain h FE (I = 6.0 Adc, V = 3.0 Vdc) C CE 750 18,000 (I = 12 Adc, V = 3.0 Vdc) C CE 100 CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 6.0 Adc, I = 24 mAdc) C B 2.0 (I = 12 Adc, I = 120 mAdc) C B 3.0 BaseEmitter Saturation Voltage (I = 12 Adc, I = 120 mAdc) V 4.0 Vdc C B BE(sat) BaseEmitter On Voltage (I = 6.0 Adc, V = 3.0 Vdc) V 2.8 Vdc C CE BE(on) DYNAMIC CHARACTERISTICS Magnitude of Common Emitter SmallSignal Short Circuit Forward h 4.0 MHz fe Current Transfer Ratio (I = 5.0 Adc, V = 3.0 Vdc, f = 1.0 MHz) C CE Output Capacitance (V = 10 Vdc, I = 0, f = 0.1 MHz) C 500 pF CB E ob SmallSignal Current Gain (I = 5.0 Adc, V = 3.0 Vdc, f = 1.0 kHz) h 300 C CE fe 2. Indicates JEDEC Registered Data. 3. Pulse test: Pulse Width = 300 s, Duty Cycle = 2.0%. V 10 CC R & R VARIED TO OBTAIN DESIRED CURRENT LEVELS B C - 30 V 2N6052 D MUST BE FAST RECOVERY TYPE, eg: 1 5.0 2N6059 1N5825 USED ABOVE I 100 mA B R C SCOPE t MSD6100 USED BELOW I 100 mA s B TUT 2.0 V 2 R B t approx f + 8.0 V 1.0 D 1 5.0 k 51 50 0 t r 0.5 V 1 + 4.0 V approx V = 30 V CC t V = 0 - 8.0 V d BE(off) 25 s for t and t , D is disconnected I /I = 250 d r 1 C B 0.2 and V = 0 2 I = I B1 B2 t , t 10 ns r f T = 25C J DUTY CYCLE = 1.0% 0.1 0.2 0.5 1.0 3.0 5.0 10 20 For NPN test circuit reverse diode and voltage polarities. I , COLLECTOR CURRENT (AMP) C Figure 2. Switching Times Test Circuit Figure 3. Switching Times

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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