NZQA5V6XV5T1G Series Quad Array for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as onsemi.com www. computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium. SOT553 CASE 463B Specification Features SOT553 Package Allows Four Separate Unidirectional MARKING DIAGRAM Configurations Low Leakage < 1 A 3 V for NZQA5V6XV5T1G xx M Breakdown Voltage: 5.6 V 6.8 V 1 mA ESD Protection Meeting IEC6100042 Level 4 xx = Specific Device Code SZ Prefix for Automotive and Other Applications Requiring Unique M = Date Code Site and Control Change Requirements AECQ101 Qualified and = PbFree Package (Note: Microdot may be in either location) PPAP Capable These are PbFree Devices Mechanical Characteristics 1 5 Void Free, TransferMolded, Thermosetting Plastic Case Corrosion Resistant Finish, Easily Solderable 2 Package Designed for Optimal Automated Board Assembly 3 4 Small Package Size for High Density Applications 100% Lead Free, MSL1 260C Reflow Temperature ORDERING INFORMATION Device Package Shipping NZQA5V6XV5T1G SOT553 4000 / Tape & (PbFree) Reel NZQA5V6XV5T3G SOT553 16000 / (PbFree) Tape & Reel NZQA6V2XV5T1G SOT553 4000 / Tape & (PbFree) Reel NZQA6V8XV5T1G SOT553 4000 / Tape & (PbFree) Reel SZQA6V8XV5T1G SOT553 4000 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: April, 2017 Rev. 5 NZQA5V6XV5T1/DNZQA5V6XV5T1G Series ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T V Maximum Temperature Coefficient of V BR BR I PP I Forward Current F UniDirectional V Forward Voltage I F F Z Maximum Zener Impedance I ZT ZT I Reverse Current ZK Z Maximum Zener Impedance I ZK ZK MAXIMUM RATINGS (T = 25C unless otherwise noted) A Characteristic Symbol Value Unit Peak Power Dissipation (8 X 20 s T = 25C) (Note 1) P 100 W A PK Steady State Power 1 Diode (Note 2) P 300 mW D Thermal Resistance Junction to Ambient R 370 C/W JA Above 25C, Derate 2.7 mW/C Maximum Junction Temperature T 150 C Jmax Operating Junction and Storage Temperature Range T T 55 to +150 C J stg ESD Discharge MIL STD 883C Method 30156 V 16 kV PP IEC100042, Air Discharge 30 IEC100042, Contact Discharge 30 Lead Solder Temperature (10 seconds duration) T 260 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (T = 25C) A Typ Capacitance Max Breakdown Voltage Leakage Current 0 V Bias V I = F F V 1 mA (Volts) I V (Note 3) 200 mA V Max I BR RM RM C PP Device Marking Min Nom Max V I ( A) V (V) I (A) (pF) (V) Device* RWM RWM C PP NZQA5V6XV5T1G 56 5.32 5.6 5.88 3.0 1.0 10.5 10 90 1.3 NZQA6V2XV5T1G 62 5.89 6.2 6.51 4.0 0.5 11.5 9.0 80 1.3 NZQA6V8XV5T1G 68 6.46 6.8 7.14 4.3 0.1 12.5 8.0 70 1.3 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. *Includes SZprefix devices where applicable. 1. Nonrepetitive current per Figure 1. 2. Only 1 diode under power. For all 4 diodes under power, P will be 25%. Mounted on FR4 board with min pad. D 3. Capacitance of one diode at f = 1 MHz, V = 0 V, T = 25C R A www.onsemi.com 2