Product Information

NZQA6V8AXV5T1G

NZQA6V8AXV5T1G electronic component of ON Semiconductor

Datasheet
ESD Suppressors / TVS Diodes Low Cap. TVS Quad Array for ESD

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3622 ea
Line Total: USD 0.36

11478 - Global Stock
Ships to you between
Wed. 15 May to Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2483 - WHS 1


Ships to you between Thu. 09 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

NZQA6V8AXV5T1G
ON Semiconductor

1 : USD 0.1956
10 : USD 0.1521
100 : USD 0.1363
500 : USD 0.1331
1000 : USD 0.1179
2000 : USD 0.1164
8000 : USD 0.0974
12000 : USD 0.0954
28000 : USD 0.0954
100000 : USD 0.0954

1668 - WHS 2


Ships to you between
Thu. 16 May to Tue. 21 May

MOQ : 5
Multiples : 5

Stock Image

NZQA6V8AXV5T1G
ON Semiconductor

5 : USD 0.233
50 : USD 0.1787
150 : USD 0.1555
500 : USD 0.1264
2500 : USD 0.1135
4000 : USD 0.1059

11478 - WHS 3


Ships to you between Wed. 15 May to Fri. 17 May

MOQ : 1
Multiples : 1

Stock Image

NZQA6V8AXV5T1G
ON Semiconductor

1 : USD 0.3622
10 : USD 0.2524
100 : USD 0.1244
1000 : USD 0.1147
4000 : USD 0.1027
8000 : USD 0.0966
24000 : USD 0.0954
48000 : USD 0.093
100000 : USD 0.0894

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Qualification
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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NZQA5V6AXV5 Series ESD Protection Diode Low Clamping Voltage This integrated surge protection device is designed for applications requiring transient overvoltage protection. It is intended for use in sensitive equipment such as computers, printers, business machines, www.onsemi.com communication systems, medical equipment, and other applications. Its integrated design provides very effective and reliable protection for 1 5 four separate lines using only one package. These devices are ideal for situations where board space is at a premium. Features 2 Low Clamping Voltage 3 4 Small SOT553 SMT Package Stand Off Voltage: 3 V Low Leakage Current Four Separate Unidirectional Configurations for Protection ESD Protection: IEC6100042: Level 4 ESD Protection SCALE 4:1 MILSTD 883C Method 30156: Class 3 SOT553 Complies to USB 1.1 Low Speed & Full Speed Specifications CASE 463B These are PbFree Devices PLASTIC Benefits Provides Protection for ESD Industry Standards: IEC 61000, HBM Protects Four Lines Against Transient Voltage Conditions MARKING DIAGRAM Minimize Power Consumption of the System Minimize PCB Board Space Typical Applications xx M Instrumentation Equipment Serial and Parallel Ports Microprocessor Based Equipment xx = Device Code Notebooks, Desktops, Servers M = Date Code* Cellular and Portable Equipment = PbFree Package (Note: Microdot may be in either location) MAXIMUM RATINGS (T = 25C unless otherwise noted) A Characteristic Symbol Value Unit Peak Power Dissipation (Note 1) P 20 W PK ORDERING INFORMATION Steady State Power 1 Diode (Note 2) P 380 mW D Device Package Shipping Thermal Resistance, R 327 C/W JA JunctiontoAmbient 3.05 mW/C NZQA5V6AXV5T1 SOT553* 4000/Tape & Reel Above 25C, Derate NZQA5V6AXV5T1G SOT553* 4000/Tape & Reel Maximum Junction Temperature T 150 C Jmax Operating Junction and Storage T T 55 to +150 C J stg NZQA6V8AXV5T1 SOT553* 4000/Tape & Reel Temperature Range Lead Solder Temperature (10 seconds T 260 C NZQA6V8AXV5T1G SOT553* 4000/Tape & Reel L duration) NZQA6V8AXV5T3 SOT553* 16000/Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be NZQA6V8AXV5T3G SOT553* 16000/Tape & Reel assumed, damage may occur and reliability may be affected. 1. Nonrepetitive current per Figure 5. For information on tape and reel specifications, 2. Only 1 diode under power. For all 4 diodes under power, P will be 25%. D including part orientation and tape sizes, please Mounted on FR 4 board with min pad. refer to our Tape and Reel Packaging Specification See Application Note AND8308/D for further description of Brochure, BRD8011/D. survivability specs. *This package is inherently PbFree. Semiconductor Components Industries, LLC, 2009 1 Publication Order Number: November, 2017 Rev. 8 NZQA5V6AXV5/DNZQA5V6AXV5 Series ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current V I R RWM T V Breakdown Voltage I BR T I Test Current T V Maximum Temperature Coefficient of V BR BR I PP I Forward Current F UniDirectional V Forward Voltage I F F Z Maximum Zener Impedance I ZT ZT I Reverse Current ZK Z Maximum Zener Impedance I ZK ZK *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C) A Typ Typ Capacitance Capacitance Breakdown Leakage 0 V Bias 3 V Bias (pF) (pF) Voltage Current V Max I C PP (Note 4) (Note 3) (Note 3) V 1 mA (V) I V V BR RM RM C Per I V I IEC6100042 Device RWM C PP ( A) (V) (A) (Note 5) Device Marking Min Nom Max V Typ Max Typ Max RWM NZQA5V6AXV5 5P 5.3 5.6 5.9 3.0 1.0 13 1.6 13 17 7.0 11.5 Figures 1 and 2 (See Below) NZQA6V8AXV5 6H 6.47 6.8 7.14 4.3 1.0 13 1.6 12 15 6.7 9.5 3. Capacitance of one diode at f = 1 MHz, V = 0 V, T = 25C R A 4. Surge current waveform per Figure 5. 5. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC6100042 Negative 8 kV Contact per IEC6100042 www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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