Product Information

NZQA6V8AXV5T3G

NZQA6V8AXV5T3G electronic component of ON Semiconductor

Datasheet
ESD Suppressor TVS Automotive 5-Pin SOT-553 T/R

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5342: USD 0.0787 ea
Line Total: USD 420.42

0 - Global Stock
MOQ: 5342  Multiples: 5342
Pack Size: 5342
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 5342
Multiples : 5342

Stock Image

NZQA6V8AXV5T3G
ON Semiconductor

5342 : USD 0.0787

0 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 16000
Multiples : 16000

Stock Image

NZQA6V8AXV5T3G
ON Semiconductor

16000 : USD 0.105

     
Manufacturer
Product Category
Clamping Voltage
Package / Case
Packaging
Product Length Mm
Suppressor Type
Leakage Current
Product Height Mm
Mounting Style
Operating Temperature Min Deg C
Direction Type
Product Depth Mm
Rad Hardened
Capacitance Value
Operating Temperature Max Deg C
Configuration
Pin Count
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NZQA5V6AXV5 Series Transient Voltage Suppressors ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection. It is intended for use in sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and NZQA5V6AXV5 Series ELECTRICAL CHARACTERISTICS I (T = 25C unless otherwise noted) A I F Symbol Parameter I Maximum Reverse Peak Pulse Current PP V Clamping Voltage @ I C PP V V V V Working Peak Reverse Voltage C BR RWM RWM V I V R F I Maximum Reverse Leakage Current @ V I R RWM T V Breakdown Voltage @ I BR T I Test Current T Maximum Temperature Coefficient of V V BR BR I PP I Forward Current F UniDirectional V Forward Voltage @ I F F Z Maximum Zener Impedance @ I ZT ZT I Reverse Current ZK Z Maximum Zener Impedance @ I ZK ZK *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (T = 25C) A Typ Typ Capacitance Capacitance Breakdown Leakage @ 0 V Bias @ 3 V Bias (pF) (pF) Voltage Current V Max @ I C PP (Note 4) (Note 3) (Note 3) V @ 1 mA (V) I @ V V BR RM RM C Per I V I IEC61000 4 2 Device RWM C PP (A) (V) (A) (Note 5) Device Marking Min Nom Max V Typ Max Typ Max RWM NZQA5V6AXV5 5P 5.3 5.6 5.9 3.0 1.0 13 1.6 13 17 7.0 11.5 Figures 1 and 2 (See Below) NZQA6V8AXV5 6H 6.47 6.8 7.14 4.3 1.0 13 1.6 12 15 6.7 9.5 3. Capacitance of one diode at f = 1 MHz, V = 0 V, T = 25C R A 4. Surge current waveform per Figure 5. 5. For test procedure see Figures 3 and 4 and Application Note AND8307/D. Figure 1. ESD Clamping Voltage Screenshot Figure 2. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000 4 2 Negative 8 kV Contact per IEC61000 4 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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