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FK3306010L

FK3306010L electronic component of Panasonic
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See Product Specifications
Part No. FK3306010L
Manufacturer: Panasonic
Category: MOSFET
Description: MOSFET COMPOSITE SM SIG MOS FLAT LEAD 1.2x1.2mm
Datasheet: FK3306010L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 10000
Multiples : 10000
10000 : USD 0.0546
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 0.975
10 : USD 0.8608
100 : USD 0.195
500 : USD 0.1293
1000 : USD 0.0992
2500 : USD 0.078
10000 : USD 0.0591
20000 : USD 0.0557
50000 : USD 0.0501
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Mounting Style
Package / Case
Packaging
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Rds On
Factory Pack Quantity :
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We proudly offer the FK3306010L MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the FK3306010L MOSFET.

Doc No. TT4-EA-12592 Revision. 2 Product Standards MOS FET FK3306010L FK3306010L Silicon N-channel MOSFET Unit : mm For switching 1.2 FK350601 in SSSMini3 type package 0.3 0.13 3 Features Low drive voltage : 2.5 V drive Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 12 Marking Symbol : CV 0.2 0.52 (0.4) (0.4) Packaging 0.8 Embossed type (Thermo-compression sealing) :10 000 pcs / reel (standard) 1. Gate 2. Source Drain 3. Absolute Maximum Ratings Ta = 25 C Panasonic SSSMini3-F2-B JEITA SC-105AA Parameter Symbol Rating Unit Drain-source voltage VDS 60 V Code SOT-723 Gate-source voltage VGS 12 V Drain current ID 100 mA Pulse drain current IDp 200 mA Internal Connection Total power dissipation PD 100 mW (D) 3 Channel temperature Tch 150 C Operating Ambient Temperature Tstg -40 to + 85 C Storage temperature Tstg -55 to +150 C 1 2 (G) (S) Pin Name 1. Gate 2. Source Drain 3. Page15of Established : 2010-05-20 Revised : 2013-08-08 0.8 1.2Doc No. TT4-EA-12592 Revision. 2 Product Standards MOS FET FK3306010L Electrical Characteristics Ta = 25 C 3C Parameter Symbol Conditions Min Typ Max Unit Drain-source breakdown voltage VDSS ID = 1 mA, VGS = 0 60 V Drain-source cutoff current IDSS VDS = 60 V, VGS = 0 1.0 A Gate-source cutoff current IGSS VGS = 10 V, VDS = 0 10 A Gate threshold voltage VTH 0.9 1.2 1.5 V ID = 1.0 A, VDS = 3.0 V RDS(on)1 ID = 10 mA, VGS = 2.5 V 8 15 Drain-source ON resistance RDS(on)2 ID = 10 mA, VGS = 4.0 V 6 12 Forward transfer admittance Yfs ID = 10 mA, VDS = 3 V, f = 1 kHz 20 60 mS Input capacitance Ciss 12 pF Output capacitance Coss VDS = 3 V, VGS = 0, f = 1 MHz 7 pF Reverse transfer capacitance Crss 3 pF VDD = 3 V, VGS = 0 to 3 V, *1 ton 100 ns Turn-on time RL = 300 VDD = 3 V, VGS = 3 to 0 V, *1 toff 100 ns Turn-off time RL = 300 Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. 2. *1 Turn-on and Turn-off test circuit VVDDDD=3V=3V IIDD=1=10m0mAA RRLL=3=30000 90% DD VoVoutut 10% V GS ViVinn VV GGSS==003V3V 10% GG V out 5050 90% SS ton toff Page 2of 5 Established : 2010-05-20 Revised : 2013-08-08

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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