Doc No. TT4-EA-14293 Revision. 5 Product Standards MOS FET FK3P02110L FK3P02110L Package dimension Unit: mm Silicon N-channel MOSFET For Load-switching 1.6 0.2 3 (0.25) Features Low drain-source ON resistance:RDS(on)typ. = 12.5m VGS = 2.5 V) 1 2 0.3 0.3 High heat dissipated and ultra-compact package PMCP 3 RoHS compliant (EU RoHS / MSL:Level 1 compliant) (0.65) Marking Symbol: A1 2 1 0.65 0.33 (0.45) Packaging Embossed type (Thermo-compression sealing) : 7 000 pcs / reel (standard) 1. Source 3. Drain 2. Gate Absolute Maximum Ratings Ta = 25 C Panasonic PMCP-1816-Z1 JEITA Parameter Symbol Rating Unit Drain-source voltage VDS 24 V Code Gate-source voltage VGS 12 V *2 ID1 3.0 Equivalent circuit, Pin name Ta = 25 C, DC Drain current A *3 ID2 6.0 Ta = 25 C, DC *1 *2 IDp1 9.0 Drain current Ta = 25 C 3 A *1 *3 (Pulsed) IDp2 18.0 Ta = 25 C *2 Total power PD1 200 Ta = 25 C, DC Rg 2 mW *3 dissipation PD2 750 1. Ta = 25 C, DC Source Channel temperature Tch 150 2. Gate Operating ambient temperature Topr -40 to +85 C 3. Drain Storage temperature range Tstg -55 to +150 Note *1 t = 10 s, Duty Cycle < 1% *2 When mounted on glass epoxy board typeA (Refer to Figure1) 1 *3 When mounted on glass epoxy board typeB (Refer to Figure2) Electrical Characteristics Ta = 25 C 3 C Static Characteristics Parameter Symbol Conditions Min Typ Max Unit Drain-source breakdown voltage VDSS ID = 1.0 mA, VGS = 0 V 24 V Zero gate voltage drain current IDSS VDS = 24 V, VGS = 0 V 1.0 A Gate-source leakage current IGSS VGS = 8 V, VDS = 0 V 10 A Gate-source threshold voltage Vth ID = 1.0 mA, VDS = 10 V 0.4 0.85 1.4 V Drain-source on-state resistance RDS(on) ID = 3.0 A, VGS = 2.5 V 12.5 20.0 m Dynamicic Characteristics Parameter Symbol Conditions Min Typ Max Unit *1 Input capacitance Ciss 1500 *1 Coss VDS = 10 V, VGS = 0 V, f = 1 MHz 140 pF Output capacitance *1 Crss 140 Reverse transfer capacitance Page 1of 6 Established : 2012-10-25 Revised : 2013-05-16 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type) 1.8 0.3 0.7Doc No. TT4-EA-14293 Revision. 5 Product Standards MOS FET FK3P02110L Parameter Symbol Conditions Min Typ Max Unit *1 *2 td(on) 0.6 Turn-on delay time VDD = 10 V, VGS = 0 to 4 V,ID = 3.0 A s *1 *2 tr Rise time 0.9 *1 *2 td(off) 5.0 Turn-off delay time VDD = 10 V, VGS = 4 to 0 V,ID = 3.0 A s *1 *2 tf 2.3 Fall time Note 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuringmethods for transistors. 2. *1 Assured by design *2 Refer to figure3, measurement circuit for Turn-on delay time / Rise time / Turn-off delay time / Fall time Figure1: Glass epoxy board typeA 2 Material:FR4, Size:25.4mm x 25.4mm x t 1.0mm, Cu pad:tickness 36 m, 25.3mm Cu pad 25.4mm 25.4mm Figure2: Glass epoxy board typeB 2 Material:FR4, Size:25.4mm x 25.4mm x t 1.0mm, Cu pad:tickness 36 m, 82.0mm Cu 25.4mm 25.4mm Page 2of 6 Established : 2012-10-25 Revised : 2013-05-16 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. (planed maintenance type, maintenance type, planed discontinued typed, discontinued type)