Doc No. TT4-EA-14956
Revision. 1
Product Standards
MOS FET
FK4B01120L
FK4B01120L
Single N-channel MOS FET
Unit: mm
For Load switching circuits
1.0
3
4
TOP
Features
Low Drain-source ON resistance:RDS(on) typ. = 17m VGS = 2.5 V)
1 2
CSP (Chip Size Package)
RoHS compliant (EU RoHS / MSL:Level 1 compliant)
0.25
3 4
Marking Symbol: 1C
BOTTOM
2 1
Packaging
0.5
Embossed type (Thermo-compression sealing) : 20 000 pcs / reel (standard)
0.75
1. Gate 3. Source
2. Drain 4. Source
Absolute Maximum Ratings Ta = 25 C Panasonic ULGA004-W-1010-RA01
JEITA
Parameter Symbol Rating Unit
Drain-Source Voltage VDS 12 V Code
Gate-Source Voltage VGS 8 V
*1
3.9
ID1
*2
Drain Current 6.5 A Internal Connection
ID2
*3
7.9
ID3
2(D)
*1*4
31
IDp1
*2*4
Peak Drain Current 52 A
IDp2
*3*4
63
IDp3
*1
0.37
PD1
*2
Power Dissipation 0.94 W
PD2
*3
1.5
PD3
Channel Temperature Tch 150 C
1(G) 3,4(S
Operating Ambient Temperature Topr -40 ~ +85 C
Tstg -55 ~ +150 C
Storage Temperature
2
Note *1 FR4 board (25.4mm25.4mmt1.0mm)Min Cu 36mm Copper
*2 FR4 board (25.4mm25.4mmt1.0mm)Full Cu
*3 Ceramic substrate (70mm70mmt1.0mm)
*4 t = 10 s, Duty Cycle < 1%
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Established : 2014-03-24
Revised : ####-##-##
1.0
0.5
0.10
0.75Doc No. TT4-EA-14956
Revision. 1
Product Standards
MOS FET
FK4B01120L
Electrical Characteristics Ta = 25 C 3 C
Parameter Symbol Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage VDSS
ID = 1 mA, VGS = 0 12 V
Zero Gate Voltage Drain Current IDSS VDS = 12 V, VGS = 0 10 A
Gate-Source Leakage Current IGSS VGS = 8 V, VDS = 0 V 10 A
Gate Threshold Voltage Vth ID = 394 A, VDS =10 V 0.3 1.0 V
ID = 1.5 A, VGS = 4.5 V 14 24
ID = 1.0 A, VGS = 2.5 V 17 27
Drain-Source ON Resistance RDS(on)
m
ID = 0.5 A, VGS = 1.8 V 21 36
ID = 0.25 A, VGS = 1.5 V 27 62
*1
Ciss VDS = 10 V 490
Input Capacitance
*1
Coss VGS = 0 184 pF
Output Capacitance
*1
f = 1MHz
Crss 128
Reverse Transfer Capacitance
*1,*2
td(on)
Turn-on delay time 4.3
VDD = 6 V
*1,*2
tr 3.7
Rise time
VGS = 0 to 4.5 V ns
*1,*2
td(off) 235
Turn-off delay time
ID=1.0 A
*1,*2
tf
Fall time 147
*1
Qg 7 nC
Total Gate Charge VDD = 6 V
*1
Qgs VGS = 4.5 V 1.4 nC
Gate to Source Charge
*1
Qgd ID= 1.0 A 1.5 nC
Gate to Drain Miller Charge
Body Diode Forward Voltage VF(D-S) IF = 0.2A, VGS = 0V 0.6 1.2 V
Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 Guaranteed by design, not subject to production testing
*2 Measurement circuit for Turn-on delay time / Rise time / Turn-off delay time / Fall time
Electrical State Discharge Characteristics
Standard Test Type Symbol Conditions Class Value Unit
HBM C = 100 pF, R = 1.5 k >2k to 4k
Human body model H2 V
AEC-Q101-001
Machine model MM C = 200 pF, R = 0 M2 >100 to 200 V
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Page
Established : 2014-03-24
Revised : ####-##-##