X-On Electronics has gained recognition as a prominent supplier of RMD070N10S mosfet across the USA, India, Europe, Australia, and various other global locations. RMD070N10S mosfet are a product manufactured by Reactor-Micro. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RMD070N10S Reactor-Micro

RMD070N10S electronic component of Reactor-Micro
Images are for reference only
See Product Specifications
Part No.RMD070N10S
Manufacturer: Reactor-Micro
Category:MOSFET
Description: DFN5x6-8 MOSFETs ROHS
Datasheet: RMD070N10S Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7714 ea
Line Total: USD 0.77

Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Fri. 14 Jun to Wed. 19 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7714
10 : USD 0.6339
30 : USD 0.5651
100 : USD 0.4991
500 : USD 0.4277
1000 : USD 0.4048

     
Manufacturer
Product Category
Category
Rohs
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We are delighted to provide the RMD070N10S from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RMD070N10S and other electronic components in the MOSFET category and beyond.

The RMD070N10S is a DFN5x6-8 MOSFET manufactured by Reactor-Micro designed to reduce power losses in electronic circuits and is compliant with the EU RoHS directive 2002/95/EC. The device is constructed with an N-Channel enhancement mode MOSFET featuring excellent switching characteristics, low on-resistance, and low gate threshold voltage. The RMD070N10S has a maximum forward voltage drop of only 0.6V, high input impedance, wide operating temperature range, and low gate charge to speed up the switching operation. This device allows for use in high temperature applications and offers superior performance and reliable operation in a highly space efficient package.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Reactor-Micro
Shaanxi Reactor Microelectronics Co., Ltd

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