RMA60R1K0SN Reactor-Micro

RMA60R1K0SN electronic component of Reactor-Micro
RMA60R1K0SN Reactor-Micro
RMA60R1K0SN MOSFETs
RMA60R1K0SN  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of RMA60R1K0SN MOSFETs across the USA, India, Europe, Australia, and various other global locations. RMA60R1K0SN MOSFETs are a product manufactured by Reactor-Micro. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. RMA60R1K0SN
Manufacturer: Reactor-Micro
Category: MOSFETs
Description: TO-252 MOSFETs ROHS
Datasheet: RMA60R1K0SN Datasheet (PDF)
Price (USD)
1: USD 0.5268 ea
Line Total: USD 0.53 
Availability : 0
  
QtyUnit Price
1$ 0.5268
10$ 0.4232
30$ 0.3787
100$ 0.3233
500$ 0.2763
1000$ 0.2616

Availability 0
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.5268
10$ 0.4232
30$ 0.3787
100$ 0.3233
500$ 0.2763
1000$ 0.2616

   
Manufacturer
Product Category
Category
Rohs
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We are delighted to provide the RMA60R1K0SN from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RMA60R1K0SN and other electronic components in the MOSFETs category and beyond.

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The RMA60R1K0SN with TO-252 MOSFETs ROHS is a device manufactured by Reactor-Micro. It is a low-power, low-loss, 3.3V single N-channel, metal oxide semiconductor field-effect transistor (MOSFET). The device is constructed using a vertical N-channel with an integrated gate resistor. The device is housed within the industry-standard TO-24 packaged form and is RoHS compliant. The device is designed to handle high-frequency switching applications and has a stated on-resistance of 0.6 ohms with a current rating of 1A. Its operating temperature range is from -55°C to +125°C. The device is ideal for a wide range of applications such as power MOSFETs, switching regulators, motor drivers, and DC-DC converters.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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