X-On Electronics has gained recognition as a prominent supplier of RMC70R1K0SN MOSFETs across the USA, India, Europe, Australia, and various other global locations. RMC70R1K0SN MOSFETs are a product manufactured by Reactor-Micro. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

RMC70R1K0SN Reactor-Micro

RMC70R1K0SN electronic component of Reactor-Micro
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See Product Specifications
Part No.RMC70R1K0SN
Manufacturer: Reactor-Micro
Category: MOSFETs
Description: TO-220F MOSFETs ROHS
Datasheet: RMC70R1K0SN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6746 ea
Line Total: USD 0.67 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 0.6746
10 : USD 0.5422
50 : USD 0.4863
100 : USD 0.415
500 : USD 0.3539
1000 : USD 0.336

   
Manufacturer
Product Category
Category
Rohs
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the RMC70R1K0SN from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RMC70R1K0SN and other electronic components in the MOSFETs category and beyond.

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The RMC70R1K0SN is a surface mount N-channel MOSFET manufactured by Reactor-Micro. It is an insulated-gate bipolar transistor (IGBT) housed in a TO-220F package and is RoHS compliant. It has a maximum Vds of 100V, with a max Id of 5.1A and a max Rds(on) of 0.7ohms. It also has a maximum Pd of 40W, and a gate-source voltage (Vgs) of 10V with a gate threshold voltage (Vth) of 2.8V. It is suitable for use in a wide range of power management applications including switching power supplies, motor control, and lighting.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Reactor-Micro
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