Product Information

SP8K1FRATB

SP8K1FRATB electronic component of ROHM

Datasheet
Power Management Specialised - PMIC 30V Nch+Nch Power MOSFET - SP8K1FRA is a Power MOSFET with Low on-resistance, suitable for switching. It is a highly reliable product for automotive.

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.3051 ea
Line Total: USD 1.31

2319 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2319 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 1.3051
10 : USD 1.0251
100 : USD 0.8579
500 : USD 0.7582
1000 : USD 0.6348
2500 : USD 0.6289
5000 : USD 0.6265
10000 : USD 0.5838
25000 : USD 0.5826

     
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SP8K1FRA Datasheet 30V Nch+Nch Power MOSFET llOutline V 30V DSS R (Max.) 51m DS(on) SOP8 I 5.0A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Quantity (pcs) 2500 Taping code TB Marking SP8K1 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS Continuous drain current I 5.0 A D *1 I Pulsed drain current 20 A DP Gate - Source voltage V 20 V GSS *2 P 2.0 D Power dissipation (total) W *3 P 1.4 D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved. Not Recommended for New DesignsSP8K1FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 thJA Thermal resistance, junction - ambient (total) /W *3 R - - 89.2 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 20V, V = 0V - - 10 A GSS GS DS leakage current Gate threshold V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T j referenced to 25 V = 10V, I = 5A - 36 51 GS D Static drain - source *4 R V = 4.5V, I = 5A - 52 73 m DS(on) GS D on - state resistance V = 4.0V, I = 5A - 58 82 GS D R Gate resistance f = 1MHz, open drain - 7.0 - G Forward Transfer *4 Y V = 10V, I = 5A 3.0 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/11 20190527 - Rev.003 Not Recommended for New Designs

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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