X-On Electronics has gained recognition as a prominent supplier of SP8K1FRATB power management specialised - pmic across the USA, India, Europe, Australia, and various other global locations. SP8K1FRATB power management specialised - pmic are a product manufactured by ROHM. We provide cost-effective solutions for power management specialised - pmic, ensuring timely deliveries around the world.

SP8K1FRATB ROHM

SP8K1FRATB electronic component of ROHM
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See Product Specifications
Part No.SP8K1FRATB
Manufacturer: ROHM
Category:Power Management Specialised - PMIC
Description: Power Management Specialised - PMIC 30V Nch+Nch Power MOSFET - SP8K1FRA is a Power MOSFET with Low on-resistance, suitable for switching. It is a highly reliable product for automotive.
Datasheet: SP8K1FRATB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.265 ea
Line Total: USD 1.26

Availability - 2319
Ships to you between
Tue. 25 Jun to Thu. 27 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2319 - WHS 1


Ships to you between Tue. 25 Jun to Thu. 27 Jun

MOQ : 1
Multiples : 1
1 : USD 1.265
10 : USD 0.9936
100 : USD 0.8315
500 : USD 0.7348
1000 : USD 0.6152
2500 : USD 0.6095
5000 : USD 0.6072
10000 : USD 0.5658
25000 : USD 0.5647

   
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We are delighted to provide the SP8K1FRATB from our Power Management Specialised - PMIC category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SP8K1FRATB and other electronic components in the Power Management Specialised - PMIC category and beyond.

SP8K1FRA Datasheet 30V Nch+Nch Power MOSFET llOutline V 30V DSS R (Max.) 51m DS(on) SOP8 I 5.0A D P 2.0W D llFeatures llInner circuit 1) Low on - resistance 2) Small Surface Mount Package (SOP8) 3) Pb-free lead plating RoHS compliant 4) AEC-Q101 Qualified llPackaging specifications Embossed Packing Tape llApplication Reel size (mm) 330 Switching Tape width (mm) 12 Type Quantity (pcs) 2500 Taping code TB Marking SP8K1 llAbsolute maximum ratings (T = 25C ,unless otherwise specified) <Tr1 and Tr2> a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS Continuous drain current I 5.0 A D *1 I Pulsed drain current 20 A DP Gate - Source voltage V 20 V GSS *2 P 2.0 D Power dissipation (total) W *3 P 1.4 D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 1/11 20190527 - Rev.003 2019 ROHM Co., Ltd. All rights reserved. Not Recommended for New DesignsSP8K1FRA Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *2 R - - 62.5 thJA Thermal resistance, junction - ambient (total) /W *3 R - - 89.2 thJA llElectrical characteristics (T = 25C) <Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V (BR)DSS I = 1mA D Breakdown voltage - 29 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current Gate - Source I V = 20V, V = 0V - - 10 A GSS GS DS leakage current Gate threshold V V = 10V, I = 1mA 1.0 - 2.5 V GS(th) DS D voltage V I = 1mA GS(th) D Gate threshold voltage - -1.6 - mV/ temperature coefficient T j referenced to 25 V = 10V, I = 5A - 36 51 GS D Static drain - source *4 R V = 4.5V, I = 5A - 52 73 m DS(on) GS D on - state resistance V = 4.0V, I = 5A - 58 82 GS D R Gate resistance f = 1MHz, open drain - 7.0 - G Forward Transfer *4 Y V = 10V, I = 5A 3.0 - - S fs DS D Admittance *1 Pw 10s, Duty cycle 1% *2 Mounted on a ceramic board (30300.8mm) *3 Mounted on a FR4 (25250.8mm) *4 Pulsed www.rohm.com 2019 ROHM Co., Ltd. All rights reserved. 2/11 20190527 - Rev.003 Not Recommended for New Designs

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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