Bridge Diode Dual In-Line Package OUTLINE Package 1NA S1NBC 800V 1.5A NC 80 I 0264 I Package 1NA NC 80 0264 PS EFUBJMT PG PVUMJOF EJNFOTJPOT SFGFS UP PVS XFC TJUF PS UIF 4FNJDPOEVDUPS 4IPSU PSN BUBMPH T GPS UIF NBSLJOH SFGFS UP UIF TQFDJDBU JPO i.BSLJOH 5FSNJOBM POOFDUJPO u RATINGS Absolute Maximum Ratings l Type No. S1NBC60 S1NBC80 Symbol Item Conditions Unit Storage Temperature Operation Junction Temperature Maximum Reverse Voltage l 50Hz sine wave, Resistance load Average Rectified Forward Current Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25 Current Squared Time per diode Electrical Characteristics l Forward Voltage Pulse measurement, per diode Pulse measurement, per diode Reverse Current l Junction to Lead Thermal Resistance Junction to Ambient 2 On glass-epoxy substrate, copper soldering pad area 324mm 2 On glass-epoxy substrate, copper soldering pad area 101mm J534 28 Small DIP Bridge S1NBC CHARACTERISTIC DIAGRAMS ) TJOF XBWF JT VTFE GPS NFBTVSFNFOUT 4FNJDPOEVDUPS QSPEVDUT HFOFSBMMZ IBWF DIBSBDUFSSJTUJD WBSJBUJPO 5ZQJDBM JT B TUBUJTUJDBM BWFSBHF PG UIF EFWJDFhT BCJMJUZ J534 29