STP16N60M2, STU16N60M2 N-channel 600 V, 0.28 typ., 12 A MDmesh M2 Power MOSFET in TO-220 and IPAK packages Datasheet - production data Features TAB Order code V R max. I DS DS(on) D STP16N60M2 600 V 0.32 12 A STU16N60M2 3 2 TAB 1 TO-220 Extremely low gate charge Excellent output capacitance (C ) profile OSS 100% avalanche tested 3 2 IPAK Zener-protected 1 Applications Switching applications Figure 1: Internal schematic diagram Description D(2, TAB) These devices are N-channel Power MOSFETs developed using MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding G(1) high efficiency converters. S(3) AM15572v1 tab Table 1: Device summary Order code Marking Package Packaging STP16N60M2 TO-220 16N60M2 Tube STU16N60M2 IPAK March 2015 DocID027198 Rev 1 1/16 www.st.com This is information on a product in full production. Contents STP16N60M2, STU16N60M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package mechanical data ............................................................. 10 4.1 TO-220 type A package information ................................................ 11 4.2 IPAK (TO-251) Type A package information ................................... 13 5 Revision history ............................................................................ 15 2/16 DocID027198 Rev 1