STP170N8F7 STMicroelectronics

STP170N8F7 N-channel 80 V, 0.003 typ., 120 A, STripFET F7 Power MOSFET in TO-220 package Datasheet production data Features Order code V R max. I P DS DS(on) D TOT TAB STP170N8F7 80 V 0.0039 120 A 250 W Among the lowest R on the market DS(on) Excellent figure of merit (FoM) 3 2 1 Low C /C ratio for EMI immunity rss iss TO-220 High avalanche ruggedness Applications Switching applications Figure 1. Internal schematic diagram Description % 7 This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on- state resistance, while also reducing internal capacitance and gate charge for faster and more * efficient switching. 6 0 Y Table 1. Device summary Order code Marking Package Packaging STP170N8F7 170N8F7 TO-220 Tube February 2015 DocID024550 Rev 3 1/12 This is information on a product in full production. www.st.com 12Contents STP170N8F7 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 DocID024550 Rev 3