STP17NK40Z - STP17NK40ZFP N-CHANNEL 400V - 0.23 - 15A TO-220/TO-220FP Zener-Protected SuperMESHPower MOSFET TYPE V R I Pw DSS DS(on) D STP17NK40Z 400 V < 0.25 15 A 150 W STP17NK40ZFP 400 V < 0.25 15 A 35 W TYPICAL R (on) = 0.23 DS EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED 3 VERY LOW INTRINSIC CAPACITANCES 2 1 VERY GOOD MANUFACTURING REPEATIBILITY TO-220FP TO-220 DESCRIPTION The SuperMESH series is obtained through an extreme optimization of STs well established strip- based PowerMESH layout. In addition to pushing INTERNAL SCHEMATIC DIAGRAM on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC LIGHTING ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING STP17NK40Z P17NK40Z TO-220 TUBE STP17NK40ZFP P17NK40ZFP TO-220FP TUBE October 2002 1/10STP17NK40Z - STP17NK40ZFP ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP17NK40Z STP17NK40ZFP V Drain-source Voltage (V = 0) 400 V DS GS V Drain-gate Voltage (R = 20 k) 400 V DGR GS V Gate- source Voltage 30 V GS I Drain Current (continuous) at T = 25C 15 15 (*) A D C I Drain Current (continuous) at T = 100C 9.4 9.4 (*) A D C I (l) Drain Current (pulsed) 60 60 (*) A DM P Total Dissipation at T = 25C 150 35 W TOT C Derating Factor 1.2 0.28 W/C I Gate-source Current (DC) 20 mA GS V Gate source ESD(HBM-C=100pF, R=1.5K) 4500 V ESD(G-S) dv/dt (1) Peak Diode Recovery voltage slope 4.5 V/ns Viso Insulation Withstand Voltage (DC) -- 2500 V T Operating Junction Temperature -55 to 150 C j T Storage Temperature -55 to 150 C stg ( l) Pulse width limited by safe operating area (1) I 15A, di/dt 200A/s, V V , T T SD DD (BR)DSS j JMAX. (*) Limited only by maximum temperature allowed THERMAL DATA TO-220 TO-220FP Rthj-case Thermal Resistance Junction-case Max 0.83 3.6 C/W Rthj-amb Thermal Resistance Junction-ambient Max 62.5 C/W T Maximum Lead Temperature For Soldering Purpose 300 C l AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit I Avalanche Current, Repetitive or Not-Repetitive 15 A AR (pulse width limited by T max) j E Single Pulse Avalanche Energy 450 mJ AS (starting T = 25 C, I = I , V = 50 V) j D AR DD GATE-SOURCE ZENER DIODE Symbol Parameter Test Conditions Min. Typ. Max. Unit BV Gate-Source Breakdown Igs= 1mA (Open Drain) 30 V GSO Voltage PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the devices ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the devices integrity. These integrated Zener diodes thus avoid the usage of external components. 2/10