X-On Electronics has gained recognition as a prominent supplier of TIP115 darlington transistors across the USA, India, Europe, Australia, and various other global locations. TIP115 darlington transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for darlington transistors, ensuring timely deliveries around the world.

TIP115 STMicroelectronics

TIP115 electronic component of STMicroelectronics
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See Product Specifications
Part No.TIP115
Manufacturer: STMicroelectronics
Category:Darlington Transistors
Description: Bipolar (BJT) Transistor PNP - Darlington 60 V 2 A 2 W Through Hole TO-220
Datasheet: TIP115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4702 ea
Line Total: USD 0.47

Availability - 1
Ships to you between
Fri. 07 Jun to Thu. 13 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1 - WHS 1


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4702
10 : USD 0.4412
100 : USD 0.3906
500 : USD 0.3596
1000 : USD 0.3099
2500 : USD 0.3004
10000 : USD 0.287

1398 - WHS 2


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7398
10 : USD 0.6707
100 : USD 0.575

785 - WHS 3


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 1
Multiples : 1
1 : USD 0.858
10 : USD 0.7514
38 : USD 0.4446
103 : USD 0.4199
1000 : USD 0.4043

1398 - WHS 4


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 14
Multiples : 1
14 : USD 0.6707
100 : USD 0.575

698 - WHS 5


Ships to you between Fri. 07 Jun to Thu. 13 Jun

MOQ : 25
Multiples : 1
25 : USD 0.449
100 : USD 0.3977
500 : USD 0.3661
1000 : USD 0.3158
2500 : USD 0.306
10000 : USD 0.2925

     
Manufacturer
Product Category
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Mounting
Polarisation
Kind Of Transistor
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Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Category
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We are delighted to provide the TIP115 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TIP115 and other electronic components in the Darlington Transistors category and beyond.

TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS 3 2 LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT TO-220 DESCRIPTION The TIP110 and TIP112 are silicon Epitaxial-Base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications. INTERNAL SCHEMATIC DIAGRAM The complementary PNP types are TIP115 and TIP117. R1 Typ.= 7K R2 Typ.= 230 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN TIP110 TIP112 PNP TIP115 TIP117 V Collector-Base Voltage (I = 0) 60 100 V CBO E V Collector-Emitter Voltage (I = 0) 60 100 V CEO B V Emitter-Base Voltage (I = 0) 5 V EBO C I Collector Current 2 A C I Collector Peak Current 4 A CM I Base Current 50 mA B o P Total Dissipation at T 25 C 50 W tot case o 2 W T 25 C amb o Tstg Storage Temperature -65 to 150 C o T Max. Operating Junction Temperature 150 C j * For PNP types voltage and current values are negative 1/6 June 1999TIP110/TIP112/TIP115/TIP117 THERMAL DATA o R Thermal Resistance Junction-case Max 2.5 C/W thj-case o R Thermal Resistance Junction-ambient Max 62.5 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = Half Rated V 2mA CEO CE CEO Current (I = 0) B I Collector Cut-off V = Rated V 1mA CBO CB CBO Current (I = 0) E I Emitter Cut-off Current V = 5 V 2 mA EBO EB (I = 0) C V * Collector-Emitter I = 30 mA CEO(sus) C Sustaining Voltage for TIP110/115 60 V (I = 0) for TIP112/117 100 V B V * Collector-Emitter I = 2 A I = 8 mA 2.5 V CE(sat) C B Saturation Voltage V * Base-Emitter Voltage I = 2 A V = 4 V 2.8 V BE C CE h * DC Current Gain I = 1 A V = 4 V 1000 FE C CE I = 2 A V = 4 V 500 C CE * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Areas Derating Curve 2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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