TIP117 STMicroelectronics

TIP117 electronic component of STMicroelectronics
TIP117 STMicroelectronics
TIP117 Darlington Transistors
TIP117  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TIP117 Darlington Transistors across the USA, India, Europe, Australia, and various other global locations. TIP117 Darlington Transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for Darlington Transistors, ensuring timely deliveries around the world.

Part No. TIP117
Manufacturer: STMicroelectronics
Category: Darlington Transistors
Description: Darlington Transistors PNP Power Darlington
Datasheet: TIP117 Datasheet (PDF)
Price (USD)
1: USD 0.3802 ea
Line Total: USD 0.38 
Availability : 0
  
QtyUnit Price
1$ 0.3802
5$ 0.3744
50$ 0.3393
250$ 0.275
1000$ 0.2457

Availability 0
Ship by Mon. 10 Nov to Fri. 14 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.3802
5$ 0.3744
50$ 0.3393
250$ 0.275
1000$ 0.2457

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Collector- Base Voltage VCBO
Maximum DC Collector Current
Maximum Collector Cut-off Current
Mounting Style
Package / Case
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the TIP117 from our Darlington Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TIP117 and other electronic components in the Darlington Transistors category and beyond.

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TIP110/112 TIP115/117 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS STMicroelectronics PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES MONOLITHIC DARLINGTON CONFIGURATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS 3 2 LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT TO-220 DESCRIPTION The TIP110 and TIP112 are silicon Epitaxial-Base NPN transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in medium power linear and switching applications. INTERNAL SCHEMATIC DIAGRAM The complementary PNP types are TIP115 and TIP117. R1 Typ.= 7K R2 Typ.= 230 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit NPN TIP110 TIP112 PNP TIP115 TIP117 V Collector-Base Voltage (I = 0) 60 100 V CBO E V Collector-Emitter Voltage (I = 0) 60 100 V CEO B V Emitter-Base Voltage (I = 0) 5 V EBO C I Collector Current 2 A C I Collector Peak Current 4 A CM I Base Current 50 mA B o P Total Dissipation at T 25 C 50 W tot case o 2 W T 25 C amb o Tstg Storage Temperature -65 to 150 C o T Max. Operating Junction Temperature 150 C j * For PNP types voltage and current values are negative 1/6 June 1999TIP110/TIP112/TIP115/TIP117 THERMAL DATA o R Thermal Resistance Junction-case Max 2.5 C/W thj-case o R Thermal Resistance Junction-ambient Max 62.5 C/W thj-amb o ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit I Collector Cut-off V = Half Rated V 2mA CEO CE CEO Current (I = 0) B I Collector Cut-off V = Rated V 1mA CBO CB CBO Current (I = 0) E I Emitter Cut-off Current V = 5 V 2 mA EBO EB (I = 0) C V * Collector-Emitter I = 30 mA CEO(sus) C Sustaining Voltage for TIP110/115 60 V (I = 0) for TIP112/117 100 V B V * Collector-Emitter I = 2 A I = 8 mA 2.5 V CE(sat) C B Saturation Voltage V * Base-Emitter Voltage I = 2 A V = 4 V 2.8 V BE C CE h * DC Current Gain I = 1 A V = 4 V 1000 FE C CE I = 2 A V = 4 V 500 C CE * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % For PNP types voltage and current values are negative. Safe Operating Areas Derating Curve 2/6

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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