ChipSESD PRODUCT: SESD0402P1BN-0450-090 Silicon ESD Protector DOCUMENT: SCD27764 Overvoltage Protection Device REV LETTER: B Circuit Protection Products REV DATE: JULY 26, 2016 PAGE NO.: 1 OF 5 Specification Status: Released BENEFITS Silicon ESD device in an EIA-0402 size rectangular passive component SMT package Standard PCB assembly and rework processes Bi-directional operation allows placement on PCB without orientation constraint Appropriate for ESD protection in space-constrained portable electronics and mobile handsets Suitable for +5V operating voltage applications Helps protect electronic circuits against damage from Electrostatic Discharge (ESD) events Assist equipment to pass IEC61000-4-2, level 4 testing RoHS compliant and Halogen Free PART NUMBERING FEATURES SESD 0402 P1BN - 0450 - 090 Input capacitance 4.5pF (typ) Series Breakdown Voltage Low leakage current 1.0A (max) EIA Size 9.0V (min) Low working reverse voltage 6.0V (max) Input Capacitance Package Type ESD maximum rating per IEC61000-4-2 standard 4.5 pF (typ) (1) P - Packaged SMD o 10kV contact discharge .. o 16kV air discharge 1 - one channel N - No Common pin Capable of withstanding numerous ESD strikes B - Bidirectional Small package size: 1.10mm x 0.50mm (typ) MATERIALS Low package height: 0.50mm (typ) INFORMATION RoHS Compliant ELV Compliant Halogen Free * APPLICATIONS HF Cellular phones and portable electronics Digital cameras and camcorders * Halogen Free refers to: Br900ppm, Cl900ppm, Br+Cl1500ppm Terminal finish: 100% Matte Tin (Sn) USB 2.0 and computer I/O ports Notebooks, set top boxes, motherboards Applications requiring high ESD performance o Device Characteristics T = 25 C Min Typ Max Unit Input Capacitance V = 0V, f = 1MHz r -- 4.5 5.5 pF Working Reverse Voltage (peak) - V -- -- 6.0 V RWM (2) Breakdown Voltage V I = 1mA br t 9.0 11.0 -- V Leakage current V = 6.0V A -- -- 1.0 RWM Clamping Voltage Ipp=2A, tp=(8/20s) -- 10.0 12.0 V (1) ESD contact discharge per IEC61000-4-2 standard -- -- 10 kV ESD air discharge per IEC61000-4-2 standard -- -- 16 kV Operating (T ) and Storage Temperature Range junction -40 to +125 C (1) 10kV 50 pulses under IEC61000-4-2 8kV 1,000 pulses under IEC61000-4-2 (2) V is measured at test current I br t 2016 Littelfuse,Inc. littelfuse.com Specifications are subject to change without notice. Revised July 26, 2016 ChipSESD PRODUCT: SESD0402P1BN-0450-090 Silicon ESD Protector DOCUMENT: SCD27764 Overvoltage Protection Device REV LETTER: B Circuit Protection Products REV DATE: JULY 26, 2016 PAGE NO.: 2 OF 5 DEVICE DIMENSIONS AA AA BB CC DD DD Drawings Not To Scale Typical A B C D mm 1.10 0.1 0.50 0.1 0.50 0.1 0.25 0.15 mils* 43.31 4.0 19.69 4.0 19.69 4.0 9.84 6.0 * Round off approximation RECOMMENDED LANDING PATTERN: PCPC Boa Boardrd PaPadd PaPadd WW LL SS LL L S W Typical mm 0.61 0.05 0.52 0.05 0.50 0.05 mils* 24.0 2.0 21.0 2.0 20.0 2.0 * Round off approximation Recommended solder thickness: 150 to 200 um Recommended rework procedure: o o Soldering iron tip temperature should be less than 350 C o Apply iron tip to solder for less than 5 seconds o Do not apply solder iron tip to the body of this product directly 2016 Littelfuse,Inc. littelfuse.com Specifications are subject to change without notice. Revised July 26, 2016